| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 62 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 63 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 64 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 65 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 66 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 67 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 68 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 69 |
2B940A |
Silicon PNP epitaxial planar type(For power amplification) |
Panasonic |
| 70 |
2DI200D-100 |
Power transistor module for power switching, AC and DC motor control applications |
COLLMER SEMICONDUCTOR INC |
| 71 |
2DI30Z-100 |
Power transistor module for power switching, AC and DC motor control applications |
COLLMER SEMICONDUCTOR INC |
| 72 |
2DI75Z-100 |
Power transistor module for power switching, Ac and DC motor control applications |
COLLMER SEMICONDUCTOR INC |
| 73 |
2DI75Z-120 |
Power transistor module for power switching, Ac and DC motor control applications |
COLLMER SEMICONDUCTOR INC |
| 74 |
2N2947 |
NPN silicon annular transistor for power amplifier applications to 100MHz |
Motorola |
| 75 |
2N2948 |
NPN silicon annular transistor for power amplifier applications to 100MHz |
Motorola |
| 76 |
2N2949 |
NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-107 case |
Motorola |
| 77 |
2N2950 |
NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-102 case |
Motorola |
| 78 |
2N3055 |
NPN TRANSISTOR FOR POWERFUL AF OUTPUT STAGES |
Siemens |
| 79 |
2N3298 |
NPN silicon transistor for power oscillator applications to 150 MHz |
Motorola |
| 80 |
2N3664 |
NPN silicon transistor for power amplifier and driver applications to 500MHz |
Motorola |
| 81 |
2N4427 |
VHF OSCILLATOR POWER AMPLIFIER |
ST Microelectronics |
| 82 |
2N5109 |
RF NPN transistor for power UHF amplifier |
IPRS Baneasa |
| 83 |
2N5109A |
RF NPN transistor for power UHF amplifier |
IPRS Baneasa |
| 84 |
2N5109B |
RF NPN transistor for power UHF amplifier |
IPRS Baneasa |
| 85 |
2N5836 |
RF NPN transistor for power UHF amplifier |
IPRS Baneasa |
| 86 |
2N5837 |
RF NPN transistor for power UHF amplifier |
IPRS Baneasa |
| 87 |
2SA1094 |
Silicon PNP epitaxial transistor, for power amplifier applications |
TOSHIBA |
| 88 |
2SA1173 |
PNP silicon epitaxial transistor power MINI MOLD |
NEC |
| 89 |
2SA1306B |
1.5 A; 200V; 20W; silicon PNP epitaxial type stransistor. For power amplifier applications, driver stage amplifier applications |
TOSHIBA |
| 90 |
2SA1463 |
HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
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