No. |
Part Name |
Description |
Manufacturer |
61 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
62 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
63 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
64 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
65 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
66 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
67 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
68 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
69 |
2B940A |
Silicon PNP epitaxial planar type(For power amplification) |
Panasonic |
70 |
2DI200D-100 |
Power transistor module for power switching, AC and DC motor control applications |
COLLMER SEMICONDUCTOR INC |
71 |
2DI30Z-100 |
Power transistor module for power switching, AC and DC motor control applications |
COLLMER SEMICONDUCTOR INC |
72 |
2DI75Z-100 |
Power transistor module for power switching, Ac and DC motor control applications |
COLLMER SEMICONDUCTOR INC |
73 |
2DI75Z-120 |
Power transistor module for power switching, Ac and DC motor control applications |
COLLMER SEMICONDUCTOR INC |
74 |
2N2947 |
NPN silicon annular transistor for power amplifier applications to 100MHz |
Motorola |
75 |
2N2948 |
NPN silicon annular transistor for power amplifier applications to 100MHz |
Motorola |
76 |
2N2949 |
NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-107 case |
Motorola |
77 |
2N2950 |
NPN silicon annular transistors for power amplifier and driver applications to 100MHz, TO-102 case |
Motorola |
78 |
2N3055 |
NPN TRANSISTOR FOR POWERFUL AF OUTPUT STAGES |
Siemens |
79 |
2N3298 |
NPN silicon transistor for power oscillator applications to 150 MHz |
Motorola |
80 |
2N3664 |
NPN silicon transistor for power amplifier and driver applications to 500MHz |
Motorola |
81 |
2N4427 |
VHF OSCILLATOR POWER AMPLIFIER |
ST Microelectronics |
82 |
2SA1094 |
Silicon PNP epitaxial transistor, for power amplifier applications |
TOSHIBA |
83 |
2SA1306B |
1.5 A; 200V; 20W; silicon PNP epitaxial type stransistor. For power amplifier applications, driver stage amplifier applications |
TOSHIBA |
84 |
2SA1463 |
HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
85 |
2SA1500 |
For power switching |
Panasonic |
86 |
2SA1550 |
For power switching |
Panasonic |
87 |
2SA1988 |
PNP SILICON TRANSISTOR POWER AMPLIFIER INDUSTRIAL USE |
NEC |
88 |
2SB1115 |
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
89 |
2SB1115A |
PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD |
NEC |
90 |
2SB1155 |
Silicon PNP epitaxial planar type(For power switching) |
Panasonic |
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