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Datasheets for ORD

Datasheets found :: 15509
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |
No. Part Name Description Manufacturer
61 2SA640 PNP silicon transistor designed for use in AF low noise amplifier of STEREOSET, RADIO and TAPE RECORDER NEC
62 2SA750 PNP silicon transistor designed for use in AF low noise amplifier of high-class STEREOSET, RADIO and TAPERECORDER NEC
63 37LV128 Note:This product has become 'Obsolete' and is no longer offered as a viable device.37LV128 is a Serial OTP EPROM device organized internally in a x32 configuration with 131,072 bits and 4096x32 programming word. The 37LV128 is suitable fo Microchip
64 37LV36 Note:This product has become 'Obsolete' and is no longer offered as a viable device.37LV36 is a Serial OTP EPROM device organized internally in a x32 configuration with 36,288 bits and 1134x32 programming word. The 37LV36 is suitable for m Microchip
65 37LV65 Note:This product has become 'Obsolete' and is no longer offered as a viable device.37LV36 is a Serial OTP EPROM device organized internally in a x32 configuration with 65,536 bits and 2048x32 programming word. The 37LV36 is suitable for m Microchip
66 40-1.10EN Multipoint Recorder Arucomp EK-Ex. A Unknow
67 4036BP 4 word x 8 bit static RAM (binary addressing) TOSHIBA
68 4039BP 4 word x 8 bit static RAM (direct word-line addressing) TOSHIBA
69 4039BP 4 word x 8 bit static RAM (direct word-line addressing) TOSHIBA
70 50S116T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
71 50S116T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
72 50S116T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
73 54S416T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate
74 54S416T-6 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA Ceramate
75 54S416T-7 High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA Ceramate
76 5962F1120101QXA 72-Mbit QDR� II+ SRAM Two-Word Burst Architecture with RadStop™ Technology Cypress
77 5962F1120101VXA 72-Mbit QDR� II+ SRAM Two-Word Burst Architecture with RadStop™ Technology Cypress
78 5962F1120102QXA 72-Mbit QDR� II+ SRAM Four-Word Burst Architecture with RadStop™ Technology Cypress
79 5962F1120102VXA 72-Mbit QDR� II+ SRAM Four-Word Burst Architecture with RadStop™ Technology Cypress
80 5962F1120201QXA 72-Mbit QDR� II+ SRAM Two-Word Burst Architecture with RadStop™ Technology Cypress
81 5962F1120202QXA 72-Mbit QDR� II+ SRAM Four-Word Burst Architecture with RadStop™ Technology Cypress
82 7403 4-Bit x 64-word FIFO register; 3-state Philips
83 74170PC 16-bit register file, organized as 4 words of 4 bits each TUNGSRAM
84 74HC40105 4-bit x 16-word FIFO register Philips
85 74HC40105D 4-bit x 16-word FIFO register Nexperia
86 74HC40105D 4-bit x 16-word FIFO register NXP Semiconductors
87 74HC40105D 4-bit x 16-word FIFO register Philips
88 74HC40105DB 4-bit x 16-word FIFO register NXP Semiconductors
89 74HC40105DB 4-bit x 16-word FIFO register Philips
90 74HC40105N 4-bit x 16-word FIFO register NXP Semiconductors


Datasheets found :: 15509
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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