No. |
Part Name |
Description |
Manufacturer |
61 |
2N2906A |
hfe min 40 Transistor polarity PNP Current Ic continuous max 0.6 A Voltage Vce sat max 0.4 V Voltage Vceo 60 V Current Ic @ Vce sat 150 mA Time fall @ Ic 50 ns Current Ic (hfe) 500 mA |
SGS Thomson Microelectronics |
62 |
2N4427 |
ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W |
SGS Thomson Microelectronics |
63 |
2N5884 |
hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 |
SGS Thomson Microelectronics |
64 |
2N6755 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. |
General Electric Solid State |
65 |
2N6756 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. |
General Electric Solid State |
66 |
2N6757 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. |
General Electric Solid State |
67 |
2N6758 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. |
General Electric Solid State |
68 |
2N6759 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
69 |
2N6760 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. |
General Electric Solid State |
70 |
2N6761 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. |
General Electric Solid State |
71 |
2N6762 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. |
General Electric Solid State |
72 |
2N6764 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. |
General Electric Solid State |
73 |
2N6766 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. |
General Electric Solid State |
74 |
2N918 |
hfe min 20 ft typ 600 MHz Transistor polarity NPN Current Ic continuous max 0.05 A Voltage Vcbo 30 V Voltage Vceo 15 V Current Ic (hfe) 3 mA Power Ptot 0.2 W |
SGS Thomson Microelectronics |
75 |
2SB1126 |
PNP Epitaxial Planar Silicon Transistors For Various Drivers |
SANYO |
76 |
2SB880 |
PNP Epitaxial Planar Silicon Darlington Tranasistors For Various Drivers Applications |
SANYO |
77 |
2SC4491 |
NPN Epitaxial Planar Silicon Transistor L Load (Various Drivers) Switching Applications |
SANYO |
78 |
2SC4671 |
NPN Epitaxial Planar Silicon Darlington Transistor Various Drivers Applications |
SANYO |
79 |
2SD1190 |
NPN Epitaxial Planar Silicon Darlington Tranasistors For Various Drivers Applications |
SANYO |
80 |
2SD1626 |
NPN Epitaxial Planar Silicon Transistors For Various Drivers |
SANYO |
81 |
3710EFE |
Secondary Side Synchronous Post Regulator |
Linear Technology |
82 |
3DSD1280-323H |
1.28 GBit Synchronous DRAM - Hermetic package |
3D PLUS |
83 |
3DSD1280-883D-S |
1.28 GBit Synchronous DRAM - Hermetic package |
3D PLUS |
84 |
3DSD1280-PROTO |
1.28 GBit Synchronous DRAM - Hermetic package |
3D PLUS |
85 |
3PHASEPWM |
3-Phase Synchronous PWM Controller IC Provides an Integrated Solution for Intel VRM 9.0 Design Guidelines |
International Rectifier |
86 |
40102BP |
8-stage presettable synchronous down counter (2-Decade BCD Type) |
TOSHIBA |
87 |
40103BP |
8-stage presettable synchronous down counter (8-Bit Binary Type) |
TOSHIBA |
88 |
4014BP |
8-stage static shift register (synchronous parallel or serial input/serial output) |
TOSHIBA |
89 |
40160BP |
DECADE WITH ASYNCHRONOUS CLEAR |
TOSHIBA |
90 |
40161BP |
Binary with asynchronous clear |
TOSHIBA |
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