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Datasheets for OUS

Datasheets found :: 31358
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No. Part Name Description Manufacturer
61 2N2906A hfe min 40 Transistor polarity PNP Current Ic continuous max 0.6 A Voltage Vce sat max 0.4 V Voltage Vceo 60 V Current Ic @ Vce sat 150 mA Time fall @ Ic 50 ns Current Ic (hfe) 500 mA SGS Thomson Microelectronics
62 2N4427 ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W SGS Thomson Microelectronics
63 2N5884 hfe min 20 Transistor polarity PNP Current Ic continuous max 25 A Voltage Vceo 80 V Current Ic (hfe) 10 A Power Ptot 200 W Temperature power 25 ?C Transistors number of 1 SGS Thomson Microelectronics
64 2N6755 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A. General Electric Solid State
65 2N6756 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A. General Electric Solid State
66 2N6757 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. General Electric Solid State
67 2N6758 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A. General Electric Solid State
68 2N6759 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
69 2N6760 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. General Electric Solid State
70 2N6761 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. General Electric Solid State
71 2N6762 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. General Electric Solid State
72 2N6764 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. General Electric Solid State
73 2N6766 N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. General Electric Solid State
74 2N918 hfe min 20 ft typ 600 MHz Transistor polarity NPN Current Ic continuous max 0.05 A Voltage Vcbo 30 V Voltage Vceo 15 V Current Ic (hfe) 3 mA Power Ptot 0.2 W SGS Thomson Microelectronics
75 2SB1126 PNP Epitaxial Planar Silicon Transistors For Various Drivers SANYO
76 2SB880 PNP Epitaxial Planar Silicon Darlington Tranasistors For Various Drivers Applications SANYO
77 2SC4491 NPN Epitaxial Planar Silicon Transistor L Load (Various Drivers) Switching Applications SANYO
78 2SC4671 NPN Epitaxial Planar Silicon Darlington Transistor Various Drivers Applications SANYO
79 2SD1190 NPN Epitaxial Planar Silicon Darlington Tranasistors For Various Drivers Applications SANYO
80 2SD1626 NPN Epitaxial Planar Silicon Transistors For Various Drivers SANYO
81 3710EFE Secondary Side Synchronous Post Regulator Linear Technology
82 3DSD1280-323H 1.28 GBit Synchronous DRAM - Hermetic package 3D PLUS
83 3DSD1280-883D-S 1.28 GBit Synchronous DRAM - Hermetic package 3D PLUS
84 3DSD1280-PROTO 1.28 GBit Synchronous DRAM - Hermetic package 3D PLUS
85 3PHASEPWM 3-Phase Synchronous PWM Controller IC Provides an Integrated Solution for Intel VRM 9.0 Design Guidelines International Rectifier
86 42S16400A 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution Inc
87 42S16800A 16Meg x 8/ 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM Integrated Silicon Solution Inc
88 42S32200 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution Inc
89 4TPB220ML N-Channel FET Synchronous Buck Regulator Controller for Low Output Voltages National Semiconductor
90 50S116T-5 High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA Ceramate


Datasheets found :: 31358
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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