| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2SA750 |
PNP silicon transistor designed for use in AF low noise amplifier of high-class STEREOSET, RADIO and TAPERECORDER |
NEC |
| 62 |
2SA9015 |
LOW FREQUENCY LOW NOISE AMPLIFIER |
USHA India LTD |
| 63 |
2SA992 |
Audio frequency low noise amplifier. Collector-base voltage: Vcbo = -120V. Collector-emitter voltage: Vceo = -120V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 500mW. |
USHA India LTD |
| 64 |
2SB439 |
Germanium PNP alloy junction transistor, low noise amplifier applications |
TOSHIBA |
| 65 |
2SB440 |
Germanium PNP alloy junction transistor, low noise amplifier applications |
TOSHIBA |
| 66 |
2SB73 |
Germanium Transistor PNP Alloyed Junction Audio Frequency Low Noise Amplifier |
Hitachi Semiconductor |
| 67 |
2SC1222 |
NPN silicon transistor designed for use in AF low noise amplifier |
NEC |
| 68 |
2SC1222 |
Transistors LOW FREQUENCY LOW NOISE AMPLIFIER |
USHA India LTD |
| 69 |
2SC1335 |
LOW FREQUENCY LOW NOISE AMPLIFIER |
Unknow |
| 70 |
2SC1400 |
NPN silicon transistor designed for use in AF low noise amplifier of a high-class STEREO-SET |
NEC |
| 71 |
2SC1815(L) |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Voltage Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
| 72 |
2SC1815L |
TRANSISTOR (AUDIO FREQUENCY VOLTAGE/ LOW NOISE AMPLIFIER APPLICATIONS) |
TOSHIBA |
| 73 |
2SC1845 |
Audio frequency low noise amplifier. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 120V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 50mA. |
USHA India LTD |
| 74 |
2SC2148 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 75 |
2SC2149 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 76 |
2SC2350 |
NPN silicon epitaxial transistor, high frequency low noise amplifier |
NEC |
| 77 |
2SC2351 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 78 |
2SC2498 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Application |
TOSHIBA |
| 79 |
2SC2570A |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 80 |
2SC2570A-T |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
| 81 |
2SC2737 |
NPN silicon transistor designed for low noise amplifier of VHF/UHF band |
NEC |
| 82 |
2SC2753 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Application |
TOSHIBA |
| 83 |
2SC2869 |
Low Noise Amplifier of VHF & UHF band |
NEC |
| 84 |
2SC3011 |
Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier Applications |
TOSHIBA |
| 85 |
2SC3098 |
Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier Applications |
TOSHIBA |
| 86 |
2SC3099 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 87 |
2SC3268 |
Transistor Silicon NPN Epitaxial Planar Type VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 88 |
2SC3302 |
TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION |
TOSHIBA |
| 89 |
2SC3324 |
Transistor Silicon NPN Epitaxial Type (PCT process) Audio Frequency Low Noise Amplifier Applications |
TOSHIBA |
| 90 |
2SC3355 |
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
NEC |
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