| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2N6248 |
Epitaxial-base, silicon P-N-P high-power transistor. -110V, 125W. |
General Electric Solid State |
| 62 |
2N6282 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
| 63 |
2N6283 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
| 64 |
2N6284 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
| 65 |
2N6285 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
| 66 |
2N6286 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
| 67 |
2N6287 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
| 68 |
2N6288 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
| 69 |
2N6289 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
| 70 |
2N6290 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
| 71 |
2N6291 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
| 72 |
2N6292 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
| 73 |
2N6293 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
| 74 |
2N6420 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
| 75 |
2N6421 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
| 76 |
2N6422 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
| 77 |
2N6423 |
High-voltage, medium-power silicon P-N-P transistor. |
General Electric Solid State |
| 78 |
2N6467 |
Silicon P-N-P medium-power transistor. -110V, 40W. |
General Electric Solid State |
| 79 |
2N6468 |
Silicon P-N-P medium-power transistor. -130V, 40W. |
General Electric Solid State |
| 80 |
2N6469 |
Epitaxial-base, silicon P-N-P high-power transistor. -50V, 125W. |
General Electric Solid State |
| 81 |
2N6473 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
| 82 |
2N6475 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
| 83 |
2N6475 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -110V. |
General Electric Solid State |
| 84 |
2N6476 |
Epitaxial-Base, Silicon N-P-N and P-N-P VERSAWATT Transistors |
Boca Semiconductor Corporation |
| 85 |
2N6476 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -130V. |
General Electric Solid State |
| 86 |
2N6489 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -50V. |
General Electric Solid State |
| 87 |
2N6490 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -70V. |
General Electric Solid State |
| 88 |
2N6491 |
15A, 75W, silicon P-N-P epitaxial-base VERSAWATT transistor. -90V. |
General Electric Solid State |
| 89 |
2N6609 |
Silicon P-N-P epitaxial-base high-power transistor. -160V, 150W. |
General Electric Solid State |
| 90 |
2N6648 |
10 A P-N-P darlington power transistor. -40 V. 70 W. Gain of 1000 at 5 A. |
General Electric Solid State |
| | | |
