| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1SS361F |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications |
TOSHIBA |
| 62 |
1SS362 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 63 |
1SS382 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 64 |
1SS387 |
Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application |
TOSHIBA |
| 65 |
1SV309 |
Diode Silicon Epitaxial Planar Type UHF SHF Tuning |
TOSHIBA |
| 66 |
2SA1989 |
For Low Frequency Amplify Application Silicon PNP Epitaxial Type Uitra Super Nini |
Isahaya Electronics Corporation |
| 67 |
2SC3011 |
Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier Applications |
TOSHIBA |
| 68 |
2SC3098 |
Transistor Silicon NPN Epitaxial Planar Type UHF~C Band Low Noise Amplifier Applications |
TOSHIBA |
| 69 |
2SC4214 |
Transistor Silicon NPN Planar Type UHF TV Tuner RF Amplifier Applications |
TOSHIBA |
| 70 |
2SC4244 |
Transistor Silicon NPN Epitaxial Planar Type UHF TV Tuner RF Amplifier Applications |
TOSHIBA |
| 71 |
2SD1071 |
TRIPLE DIFFUSED PLANER TYPE ULTRA HIGH TRANSISTOR HIGH VOLTAGE POWER AMPLIFIER |
Fuji Electric |
| 72 |
2SD929 |
TRIPLE DIFFUSED PLANER TYPE ULTRA HIGH TRANSISTOR |
Unknow |
| 73 |
2SK2854 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION |
TOSHIBA |
| 74 |
2SK2855 |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UHF BAND AMPLIFIER APPLICATION |
TOSHIBA |
| 75 |
980 |
980-Type Ultrahigh- Reliability Pump Laser Module |
Agere Systems |
| 76 |
A840 |
NPN SILICON EPITAXIAL TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD PACKAGE |
NEC |
| 77 |
DWA010 |
Silicon Epitaxial Planar Type Ultrahigh-Speed Switching Diode |
SANYO |
| 78 |
DWC010 |
Silicon Epitaxial Planar Type Ultrahigh-Speed Switching Diode |
SANYO |
| 79 |
GP1S25 |
Side Lead Type Ultra-compact Photointerrupter |
SHARP |
| 80 |
JDH2S01T |
Diode Silicon Epitaxial Schottky Barrier Type UHF Band Mixer |
TOSHIBA |
| 81 |
JDP2S01AFS |
DIODE Silicon Epitaxial PIN Type UHF~VHF Band RF Switch Applications |
TOSHIBA |
| 82 |
JDP2S01E |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
| 83 |
JDP2S01S |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
| 84 |
JDP2S01T |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
| 85 |
JDP2S01U |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
| 86 |
JDP2S02AFS |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
| 87 |
JDP2S02S |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
| 88 |
JDP2S02T |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
| 89 |
JDP2S04E |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
| 90 |
JDP4P02U |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications |
TOSHIBA |
| | | |
