No. |
Part Name |
Description |
Manufacturer |
61 |
G6742 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
62 |
G6742-003 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
63 |
G6742-01 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
64 |
G6849 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
65 |
G6849-01 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
66 |
G6854-01 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
67 |
G7150 |
InGaAs PIN photodiode array |
Hamamatsu Corporation |
68 |
G7150-16 |
Active area: 0.45x1mm; spectral response range:0.9-1.7um; reverse voltage:5V; InGaAs PIN photodiode array: 16-element array. For near infrared (NIR) spectrophotometer |
Hamamatsu Corporation |
69 |
G7151-16 |
InGaAs PIN photodiode array |
Hamamatsu Corporation |
70 |
G7871 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
71 |
G7871-02 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
72 |
G7881 |
Supply voltage:0.3-5.5V; InGaAs PIN photodiode with preamp: receptacle type, 1.3/1.55um, 156, 622Mbps/1.25, 2.5Gbps. For optical fiber communications, fiber channel, gigabit enthernet, HDTV, SDH |
Hamamatsu Corporation |
73 |
G7881-21 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
74 |
G7881-22 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
75 |
G7881-23 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
76 |
G7881-32 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
77 |
G7881-44 |
InGaAs PIN photodiode with preamp |
Hamamatsu Corporation |
78 |
G8194 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
79 |
G8194-21 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
80 |
G8194-22 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
81 |
G8194-23 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
82 |
G8194-32 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
83 |
G8194-44 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
84 |
G8195 |
InGaAs PIN photodiode |
Hamamatsu Corporation |
85 |
G8195-11 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
86 |
G8195-12 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
87 |
G8195-21 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
88 |
G8195-22 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
89 |
G8195-31 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
90 |
G8195-32 |
Spectral response range:0.9-1.7um; reverse voltage:20V; InGaAs PIN photodiode: receptacle type 1.3/1.55um, 2GHz. For optical fiber communications, fiber channel, gigabit enthernet, SDH, WDM |
Hamamatsu Corporation |
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