No. |
Part Name |
Description |
Manufacturer |
61 |
2N5088 |
Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
62 |
2N5088-D |
Amplifier Transistors NPN Silicon |
ON Semiconductor |
63 |
2N5088RLRE |
Amplifier Transistor NPN |
ON Semiconductor |
64 |
2N5089 |
Amplifier transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
65 |
2N5208 |
PNP silicon annular amplifier transistor designed for general-purpose RF amplifier applications up to 300 MHz |
Motorola |
66 |
2N5209 |
Low-Level, Low-Noise NPN Silicon amplifier transistor |
ITT Semiconductors |
67 |
2N5209 |
Amplifier Transistors(NPN Silicon) |
ON Semiconductor |
68 |
2N5209-D |
Amplifier Transistors NPN Silicon |
ON Semiconductor |
69 |
2N5209RLRE |
Amplifier Transistor NPN |
ON Semiconductor |
70 |
2N5210 |
Low-Level, Low-Noise NPN Silicon amplifier transistor |
ITT Semiconductors |
71 |
2N5210 |
Amplifier Transistors(NPN Silicon) |
ON Semiconductor |
72 |
2N5210 |
Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 50V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
73 |
2N5210RLRA |
Amplifier Transistor NPN |
ON Semiconductor |
74 |
2N5220 |
Low-Power general purpose NPN silicon amplifier transistor |
ITT Semiconductors |
75 |
2N5221 |
Low-Power General purpose PNP silicon amplifier transistor |
ITT Semiconductors |
76 |
2N5223 |
Low-Level General purpose NPN silicon amplifier transistor |
ITT Semiconductors |
77 |
2N5225 |
Medium power NPN silicon amplifier transistor |
ITT Semiconductors |
78 |
2N5226 |
Medium Power PNP Silicon Amplifier transistor |
ITT Semiconductors |
79 |
2N5227 |
General purpose PNP Silicon Low-Level amplifier transistor |
ITT Semiconductors |
80 |
2N5400 |
AMPLIFIER TRANSISTOR PNP SILICON |
Boca Semiconductor Corporation |
81 |
2N5400 |
PNP silicon annular high voltge amplifier transistor |
Motorola |
82 |
2N5400 |
Amplifier Transistor(PNP Silicon) |
ON Semiconductor |
83 |
2N5400 |
Amplifier transistor. Collector-emitter voltage: Vceo = -120V. Collector-base voltage: Vcbo = -130V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
84 |
2N5400RLRA |
Amplifier Transistor PNP |
ON Semiconductor |
85 |
2N5400RLRP |
Amplifier Transistor PNP |
ON Semiconductor |
86 |
2N5401 |
AMPLIFIER TRANSISTOR PNP SILICON |
Boca Semiconductor Corporation |
87 |
2N5401 |
PNP silicon annular high voltge amplifier transistor |
Motorola |
88 |
2N5401 |
Amplifier transistor. Collector-emitter voltage: Vceo = -150V. Collector-base voltage: Vcbo = -160V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
89 |
2N5401-D |
Amplifier Transistors PNP Silicon |
ON Semiconductor |
90 |
2N5401G |
Amplifier Transistor(PNP Silicon) |
Motorola |
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