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Datasheets for PN B

Datasheets found :: 265
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |
No. Part Name Description Manufacturer
61 2N6578 NPN BIPOLAR POWER DARLINGTON TRANSISTOR SemeLAB
62 2SC3087 NPN Bipolar Transistor for Switching Regulator Applications ON Semiconductor
63 2SC3789 NPN Bipolar Transistor for CRT, Video Output Driver Applications ON Semiconductor
64 2SC4080 NPN Bipolar Transistor for HF/Wide Band Amplifiers ON Semiconductor
65 2SC4110 NPN Bipolar Transistor for Switching Regulator Applications ON Semiconductor
66 2SC4423 NPN Bipolar Transistor for Switching Regulator Applications ON Semiconductor
67 2SC5658-Q Discrete Devices-Transistor-NPN Bipolar Transistor Taiwan Semiconductor
68 2SC5658-R Discrete Devices-Transistor-NPN Bipolar Transistor Taiwan Semiconductor
69 2SC5658-S Discrete Devices-Transistor-NPN Bipolar Transistor Taiwan Semiconductor
70 2SC5669 NPN Bipolar Transistor for Audio Power Amplifier Applications ON Semiconductor
71 2SC6102 NPN Bipolar Transistor for DC-DC Converters ON Semiconductor
72 81406 28V, Class C, common base NPN bipolar transistor designed for general purpose amplifier applications in the UHF and L-Band SGS Thomson Microelectronics
73 81410 28V, Class C, common base NPN bipolar transistor designed for UHF and L-Band SGS Thomson Microelectronics
74 81416-012 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
75 81416-20 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
76 81416-6 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
77 82223-12 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
78 82223-18 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
79 82223-20 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
80 82223-4 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.2-2.3GHz SGS Thomson Microelectronics
81 82324-20 Common base, silicon NPN bipolar transistor designed for high gain and eficiency in the 2.3-2.4GHz SGS Thomson Microelectronics
82 82325-40 High power silicon NPN bipolar device optimized for specialized pulsed applications in the 2.3-2.5GHz SGS Thomson Microelectronics
83 82327-10 Silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
84 82327-15 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
85 82327-4 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
86 82327-6 Common base, silicon NPN bipolar transistor optimized for high gain and eficiency in the 2.3-2.7GHz SGS Thomson Microelectronics
87 AM1416-001 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
88 AM1416-003 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
89 AM81416-006 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics
90 AM81416-012 Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz SGS Thomson Microelectronics


Datasheets found :: 265
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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