No. |
Part Name |
Description |
Manufacturer |
61 |
2SA0921 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
62 |
2SA1015 |
Low frequency amplifier. Collector-base voltage: Vcbo = -50V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -5V.Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
63 |
2SA1015(L) |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Amplifier Applications |
TOSHIBA |
64 |
2SA1015L |
TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS) |
TOSHIBA |
65 |
2SA1018 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
66 |
2SA1022 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
67 |
2SA1034 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
68 |
2SA1035 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
69 |
2SA1048 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications |
TOSHIBA |
70 |
2SA1048(L) |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Audio Frequency Applications |
TOSHIBA |
71 |
2SA1048(L) |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Audio Frequency Applications |
TOSHIBA |
72 |
2SA1048L |
TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS) |
TOSHIBA |
73 |
2SA1049 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications |
TOSHIBA |
74 |
2SA1123 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
75 |
2SA1124 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
76 |
2SA1127 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
77 |
2SA1128 |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
78 |
2SA1145 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY AMPLIFIER APPLICATIONS |
TOSHIBA |
79 |
2SA1150 |
Transistor Silicon PNP Epitaxial Type (PCT process) Low Frequency Amplifier Applications |
TOSHIBA |
80 |
2SA12 |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
81 |
2SA1203 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications |
TOSHIBA |
82 |
2SA1204 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications |
TOSHIBA |
83 |
2SA1220 |
PNP silicon transistor for audio frequency and high frequency power amplifier applications |
NEC |
84 |
2SA1220A |
PNP silicon transistor for audio frequency and high frequency power amplifier applications |
NEC |
85 |
2SA1226 |
HIGH FREQUENCY AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
86 |
2SA1245 |
Transistor Silicon PNP Epitaxial Planar Type High Frequency Amplifier and Switching Applications VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
87 |
2SA1254 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
88 |
2SA1256 |
High Frequency Amp Applications |
SANYO |
89 |
2SA12H |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
90 |
2SA1309A |
Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires |
Panasonic |
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