No. |
Part Name |
Description |
Manufacturer |
61 |
BS616LV4023DI |
Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable |
Brilliance Semiconductor |
62 |
BS616LV4025 |
Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable |
Brilliance Semiconductor |
63 |
BS616LV4025BC |
Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable |
Brilliance Semiconductor |
64 |
BS616LV4025BI |
Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable |
Brilliance Semiconductor |
65 |
BS616LV4025DC |
Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable |
Brilliance Semiconductor |
66 |
BS616LV4025DI |
Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable |
Brilliance Semiconductor |
67 |
BS616UV4020 |
Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable |
Brilliance Semiconductor |
68 |
BS616UV4020BC |
Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable |
Brilliance Semiconductor |
69 |
BS616UV4020BI |
Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable |
Brilliance Semiconductor |
70 |
BS616UV4020DC |
Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable |
Brilliance Semiconductor |
71 |
BS616UV4020DI |
Ultra Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable |
Brilliance Semiconductor |
72 |
D6467 |
ON-SCREEN CHARACTER DISPLAY CMOS IC FOR 512-CHARACTER, 12-ROW, 28-COLUMN, CAMERA-CONTAINED VCR |
NEC |
73 |
GLT6400L08LL-70ST |
70ns; Ultra low power 512K x 8 CMOS SRAM |
G-LINK Technology |
74 |
GLT6400L08LL-85FC |
85ns; Ultra low power 512K x 8 CMOS SRAM |
G-LINK Technology |
75 |
GLT6400L08LL-85ST |
85ns; Ultra low power 512K x 8 CMOS SRAM |
G-LINK Technology |
76 |
GLT6400L08LLI-70FC |
70ns; Ultra low power 512K x 8 CMOS SRAM |
G-LINK Technology |
77 |
GLT6400L08LLI-85FC |
85ns; Ultra low power 512K x 8 CMOS SRAM |
G-LINK Technology |
78 |
GLT6400L08SL-70FC |
70ns; Ultra low power 512K x 8 CMOS SRAM |
G-LINK Technology |
79 |
GLT6400L08SL-70ST |
70ns; Ultra low power 512K x 8 CMOS SRAM |
G-LINK Technology |
80 |
GLT6400L08SL-85FC |
85ns; Ultra low power 512K x 8 CMOS SRAM |
G-LINK Technology |
81 |
GLT6400L08SL-85ST |
85ns; Ultra low power 512K x 8 CMOS SRAM |
G-LINK Technology |
82 |
GLT6400L08SLI-70FC |
70ns; Ultra low power 512K x 8 CMOS SRAM |
G-LINK Technology |
83 |
GLT6400L08SLI-70ST |
70ns; Ultra low power 512K x 8 CMOS SRAM |
G-LINK Technology |
84 |
GLT6400L08SLI-85ST |
85ns; Ultra low power 512K x 8 CMOS SRAM |
G-LINK Technology |
85 |
GLT6400M08LL-120ST |
120ns; Ultra low power 512K x 8 CMOS SRAM |
G-LINK Technology |
86 |
GLT6400M08SL-120ST |
120ns; Ultra low power 512K x 8 CMOS SRAM |
G-LINK Technology |
87 |
GLT6400M08SLI-120ST |
120ns; Ultra low power 512K x 8 CMOS SRAM |
G-LINK Technology |
88 |
M27C800 |
8 MBIT (1MB X8 OR 512KB X16) UV EPROM AND OTP EPROM |
SGS Thomson Microelectronics |
89 |
M27C800 |
8 Mbit (1Mb x8 or 512Kb x16) UV EPROM and OTP EPROM |
SGS Thomson Microelectronics |
90 |
M27C800-100B1 |
8 MBIT (1MB X8 OR 512KB X16) UV EPROM AND OTP EPROM |
ST Microelectronics |
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