| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2N3021 |
PNP silicon power transistor for Class C power amplifiers |
Motorola |
| 62 |
2N3022 |
PNP silicon power transistor for Class C power amplifiers |
Motorola |
| 63 |
2N3023 |
PNP silicon power transistor for Class C power amplifiers |
Motorola |
| 64 |
2N3024 |
PNP silicon power transistor for Class C power amplifiers |
Motorola |
| 65 |
2N3025 |
PNP silicon power transistor for Class C power amplifiers |
Motorola |
| 66 |
2N3026 |
PNP silicon power transistor for Class C power amplifiers |
Motorola |
| 67 |
2N3055 |
Diffused NPN silicon LF power transistor with very good second-breakdown properties, for high-power LF power amplifiers, stabilization circuits and power switch applications |
ITT Semiconductors |
| 68 |
2N3055U |
Silicon HOMETAXIAL NPN transistor, high current, high power amplifier |
SGS-ATES |
| 69 |
2N3055V |
Silicon HOMETAXIAL NPN transistor, high current, high power amplifier |
SGS-ATES |
| 70 |
2N3107 |
NPN SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES |
Micro Electronics |
| 71 |
2N3108 |
NPN SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES |
Micro Electronics |
| 72 |
2N3109 |
NPN SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES |
Micro Electronics |
| 73 |
2N3110 |
NPN SILICON AF MEDIUM POWER AMPLIFIERS AND SWITCHES |
Micro Electronics |
| 74 |
2N3137 |
Epitaxial planar NPN transistor, designed for application as a Class-C, RF power amplifier |
SGS-ATES |
| 75 |
2N3295 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
| 76 |
2N3296 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
| 77 |
2N3297 |
NPN silicon annular Star transistor for linear amplifier applications from 2 to 100 MHz |
Motorola |
| 78 |
2N3375 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 79 |
2N3553 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 80 |
2N3632 |
NPN silicon RF Power transistor, optimized for large-signal power amplifier and driver applications to 400MHz |
Motorola |
| 81 |
2N3664 |
NPN silicon transistor for power amplifier and driver applications to 500MHz |
Motorola |
| 82 |
2N3733 |
NPN silicon transistor designed for amplifier, frequency multiplier and oscillator applications |
Motorola |
| 83 |
2N3771 |
Silicon HOMETAXIAL NPN transistor, high current, high power amplifier |
SGS-ATES |
| 84 |
2N3771 |
NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) |
Wing Shing Computer Components |
| 85 |
2N3772 |
Silicon HOMETAXIAL NPN transistor, high current, high power amplifier |
SGS-ATES |
| 86 |
2N3772 |
NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) |
Wing Shing Computer Components |
| 87 |
2N3773 |
NPN PLANAR SILICON TRANSISTOR(AUDIO POWER AMPLIFIER DC TO DC CONVERTER) |
Wing Shing Computer Components |
| 88 |
2N3839 |
NPN silicon annular small-signal amplifier transistor designed for amplifiers, oscillators and mixers |
Motorola |
| 89 |
2N3839 |
Epitaxial planar NPN transistor intended for amplifier, oscillator and converter applications up to 500MHz, low noise |
SGS-ATES |
| 90 |
2N3866 |
NPN silicon transistor, designed for amplifier, frequency-multiplier, or oscillator applications in military and industrial equipment |
Motorola |
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