No. |
Part Name |
Description |
Manufacturer |
61 |
2N2325 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
62 |
2N2326 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
63 |
2N2326 |
All-diffused PNPN thyristor designed for gating operation in mA/µA signal or detection circuits |
Motorola |
64 |
2N2405 |
NPN silicon annular transistor designed for medium-power applications |
Motorola |
65 |
2N2453 |
Dual NPN silicon transistor designed for differential amplifier applications |
Motorola |
66 |
2N2453A |
Dual NPN silicon transistor designed for differential amplifier applications |
Motorola |
67 |
2N2484 |
SEMICONDUCTOR DEVICE / TRANSISTOR / NPN / SILICON / LOW-POWER TYPES 2N2484 / 2N2484UA / 2N2484UB / JAN / JANTX / JANTXV / JANS / JANHC / AND JANKC |
ST Microelectronics |
68 |
2N2484UA |
SEMICONDUCTOR DEVICE / TRANSISTOR / NPN / SILICON / LOW-POWER TYPES 2N2484 / 2N2484UA / 2N2484UB / JAN / JANTX / JANTXV / JANS / JANHC / AND JANKC |
ST Microelectronics |
69 |
2N2484UB |
SEMICONDUCTOR DEVICE / TRANSISTOR / NPN / SILICON / LOW-POWER TYPES 2N2484 / 2N2484UA / 2N2484UB / JAN / JANTX / JANTXV / JANS / JANHC / AND JANKC |
ST Microelectronics |
70 |
2N2639 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
71 |
2N2640 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
72 |
2N2641 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
73 |
2N2642 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
74 |
2N2642 |
BIPOLAR DEVICES WITH POLARITY NPN |
New Jersey Semiconductor |
75 |
2N2643 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
76 |
2N2644 |
Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiers |
Motorola |
77 |
2N2646 |
Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits |
Motorola |
78 |
2N2647 |
Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits |
Motorola |
79 |
2N2845 |
NPN silicon annular transistor designed for switching applications |
Motorola |
80 |
2N2846 |
NPN silicon annular transistor designed for switching applications |
Motorola |
81 |
2N2847 |
NPN silicon annular transistor designed for switching applications |
Motorola |
82 |
2N2848 |
NPN silicon annular transistor designed for switching applications |
Motorola |
83 |
2N2857 |
NPN silicon annular small-signal amplifier transistor designed for amplifiers, oscillators and mixers |
Motorola |
84 |
2N2894 |
PNP silicon annular transistor designed for switching applications |
Motorola |
85 |
2N2944 |
PNP silicon annular transistor designed for low-level, high-speed chopper applications |
Motorola |
86 |
2N2945 |
PNP silicon annular transistor designed for low-level, high-speed chopper applications |
Motorola |
87 |
2N2946 |
PNP silicon annular transistor designed for low-level, high-speed chopper applications |
Motorola |
88 |
2N3011 |
NPN silicon low-power transistor designed for switching applications |
Motorola |
89 |
2N3043 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
90 |
2N3044 |
Dual NPN silicon transistor designed for low-level, low-noise differential amplifier applications |
Motorola |
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