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Datasheets for R44

Datasheets found :: 258
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |
No. Part Name Description Manufacturer
61 IR4427PBF Dual Low Side Driver in a 8-pin DIP package International Rectifier
62 IR4427S Dual Low Side Driver in a 8-lead SOIC package International Rectifier
63 IR4427SPBF Dual Low Side Driver in a 8-lead SOIC package International Rectifier
64 IR4427STR Dual Low Side Driver in a 8-lead SOIC package International Rectifier
65 IR4427STRPBF Dual Low Side Driver in a 8-Lead package International Rectifier
66 IR4428 Dual Low Side Driver, Half Inverting Input in a 8-pin DIP package International Rectifier
67 IR4428PBF Dual Low Side Driver, Half Inverting Input in a 8-pin DIP package International Rectifier
68 IR4428S Dual Low Side Driver, Half Inverting Input in a 8-lead SOIC package International Rectifier
69 IR4428SPBF Dual Low Side Driver, Half Inverting Input in a 8-lead SOIC package International Rectifier
70 IR4428STR Dual Low Side Driver, Half Inverting Input in a 8-lead SOIC package International Rectifier
71 IXFR44N50Q Discrete MOSFETs: HiPerFET Power MOSFETS IXYS
72 IXFR44N60 Discrete MOSFETs: HiPerFET Power MOSFETS IXYS
73 IXFR44N60 HiPerFETTM Power MOSFETs ISOPLUS247 IXYS Corporation
74 K4R441869A Direct RDRAM Samsung Electronic
75 K4R441869A-N(M) K4R271669A-N(M):Direct RDRAM� Data Sheet Samsung Electronic
76 K4R441869A-N(M)CG6 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
77 K4R441869A-N(M)CK7 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
78 K4R441869A-N(M)CK8 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM Samsung Electronic
79 K4R441869AM-CG6 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. Samsung Electronic
80 K4R441869AM-CK7 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
81 K4R441869AM-CK8 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
82 K4R441869AN-CG6 256K x 18 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. Samsung Electronic
83 K4R441869AN-CK7 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. Samsung Electronic
84 K4R441869AN-CK8 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. Samsung Electronic
85 K4R441869B Direct RDRAM Samsung Electronic
86 K4R441869B K4R271669B:Direct RDRAM� Data Sheet Samsung Electronic
87 K4R441869B-N(M)CG6 256K x 16/18 bit x 32s banks Direct RDRAMTM Samsung Electronic
88 K4R441869B-N(M)CK7 256K x 16/18 bit x 32s banks Direct RDRAMTM Samsung Electronic
89 K4R441869B-N(M)CK8 256K x 16/18 bit x 32s banks Direct RDRAMTM Samsung Electronic
90 MAX6326UR44-T 3-Pin, Ultra-Low-Power SC70/SOT ��P Reset Circuits MAXIM - Dallas Semiconductor


Datasheets found :: 258
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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