| No. |
Part Name |
Description |
Manufacturer |
| 61 |
MAX6720UTRDD3-T |
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 62 |
MAX6721UTRDD3-T |
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 63 |
MAX6722UTRDD3-T |
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 64 |
MAX6723UTRDD3-T |
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 65 |
MAX6724UTRDD3-T |
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 66 |
MAX6725KARDD3-T |
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 67 |
MAX6726KARDD3-T |
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 68 |
MAX6727KARDD3-T |
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 69 |
MAX6728KARDD3-T |
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 70 |
MAX6729KARDD3-T |
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 71 |
MAX6736XKRDD3-T |
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 72 |
MAX6737XKRDD3-T |
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 73 |
MAX6740XKRDD3-T |
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 74 |
MAX6741XKRDD3-T |
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 75 |
MAX6743XKRDD3-T |
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 76 |
MAX6744XKRDD3-T |
Vcc1: 2.625 V, Vcc2: 0.788 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
| 77 |
RDD022N50 |
10V Drive Nch MOSFET |
ROHM |
| 78 |
RDD022N50TL |
10V Drive Nch MOSFET |
ROHM |
| 79 |
RDD022N60 |
10V Drive Nch MOSFET |
ROHM |
| 80 |
RDD022N60TL |
10V Drive Nch MOSFET |
ROHM |
| 81 |
RDD023N50 |
10V Drive Nch MOSFET |
ROHM |
| 82 |
RDD023N50TL |
10V Drive Nch MOSFET |
ROHM |
| 83 |
RDD104 |
SELECTABLE 4 DECADE CMOS DIVIDER |
LSI Computer Systems |
| 84 |
RDD104-S |
Selectable 4 decade CMOS divider |
LSI Computer Systems |
| 85 |
RDDB-15P-LN |
RIGHT ANGLE TYPE CONNECTORS |
Hirose Electric |
| 86 |
RDDB-15P-LN05 |
RIGHT ANGLE TYPE CONNECTORS |
Hirose Electric |
| 87 |
RDDB-15S-LN |
RIGHT ANGLE TYPE CONNECTORS |
Hirose Electric |
| 88 |
RDDB-15S-LN05 |
RIGHT ANGLE TYPE CONNECTORS |
Hirose Electric |
| 89 |
RDDB-25P-LN |
RIGHT ANGLE TYPE CONNECTORS |
Hirose Electric |
| 90 |
RDDB-25P-LN05 |
RIGHT ANGLE TYPE CONNECTORS |
Hirose Electric |
| | | |
