No. |
Part Name |
Description |
Manufacturer |
61 |
IRF1324STRLPBF |
24V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package |
International Rectifier |
62 |
IRF133 |
N-Channel Power MOSFETs/ 20 A/ 60-100 V |
Fairchild Semiconductor |
63 |
IRF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 48A. |
General Electric Solid State |
64 |
IRF133 |
12A and 14A, 80V and 100V, 0.16 and 0.23 Ohm, N-Channel Power MOSFETs |
Intersil |
65 |
IRF133 |
N-CHANNEL POWER MOSFETS |
Samsung Electronic |
66 |
IRF133 |
MOSPOWER N-Channel Enhancement Mode Transistor 60V 12A |
Siliconix |
67 |
MRF1325M |
Microwave Pulse Power NPN silicon Transistor, 325W peak 1020-1150MHz |
Motorola |
68 |
MRF134 |
5 W, N-channel MOS broadband RF power FET |
MA-Com |
69 |
MRF134 |
Application Note - VHF MOS power applications |
Motorola |
70 |
MRF134 |
N-CHANNEL MOS BROADBAND RF POWER FET |
Motorola |
71 |
MRF134 |
Trans RF MOSFET N-CH 65V 0.9A 4-Pin Case 211-07 |
New Jersey Semiconductor |
72 |
MRF134 |
N.CHANNEL MOS BROADBAND RF POWER FET |
Tyco Electronics |
73 |
MRF136 |
15 W, N-channel MOS broadband RF power FET |
MA-Com |
74 |
MRF136 |
N-CHANNEL MOS BROADBAND RF POWER FETs |
Motorola |
75 |
MRF136 |
Trans RF MOSFET N-CH 65V 2.5A 4-Pin Case 211-07 |
New Jersey Semiconductor |
76 |
MRF136 |
N-CHANNEL MOS BROADBAND RF POWER FET |
Tyco Electronics |
77 |
MRF136Y |
30 W, N-channel MOS broadband RF power FET |
MA-Com |
78 |
MRF136Y |
RF power field-effect transistor |
Motorola |
79 |
MRF136Y |
Trans RF MOSFET N-CH 65V 5A 5-Pin Case 319B-02 |
New Jersey Semiconductor |
80 |
MRF136Y |
N-CHANNEL MOS BROADBAND RF POWER FET |
Tyco Electronics |
81 |
MRF137 |
RF POWER FIELD-EFFECT TRANSISTOR |
Advanced Semiconductor |
82 |
MRF137 |
30 W, N-channel MOS broadband RF power FET |
MA-Com |
83 |
MRF137 |
N-CHANNEL MOS BROADBAND RF POWER FET |
Motorola |
84 |
MRF137 |
N-CHANNEL MOS BROADBAND RF POWER FET |
Tyco Electronics |
85 |
MRF1375 |
Microwave Power Transistor NPN Silicon 375W (peak) 1025-1150MHz |
Motorola |
86 |
MRF138 |
N-Channel Enhancement-mode TMOS RF power field-effect transistor 30W 2.0-175MHz |
Motorola |
87 |
MRF138 |
Trans RF MOSFET N-CH 65V 5A 4-Pin |
New Jersey Semiconductor |
88 |
PB-IRF1302L |
Leaded 20V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
89 |
PB-IRF1302S |
Leaded 20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package |
International Rectifier |
90 |
PB-IRF1310NL |
Leaded 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
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