| No. |
Part Name |
Description |
Manufacturer |
| 61 |
CZRF52C6V2 |
Zener Diodes, PD=0.35Watts, VZ=6.2V |
Comchip Technology |
| 62 |
CZRF52C6V2-HF |
Halogen Free Zener Diodes, PD=0.35Watts, VZ=6.2V |
Comchip Technology |
| 63 |
CZRF52C6V8 |
Zener Diodes, PD=0.35Watts, VZ=6.8V |
Comchip Technology |
| 64 |
CZRF52C6V8-HF |
Halogen Free Zener Diodes, PD=0.35Watts, VZ=6.8V |
Comchip Technology |
| 65 |
CZRF52C7V5 |
Zener Diodes, PD=0.35Watts, VZ=7.5V |
Comchip Technology |
| 66 |
CZRF52C7V5-HF |
Halogen Free Zener Diodes, PD=0.35Watts, VZ=7.5V |
Comchip Technology |
| 67 |
CZRF52C8V2 |
Zener Diodes, PD=0.35Watts, VZ=8.2V |
Comchip Technology |
| 68 |
CZRF52C8V2-HF |
Halogen Free Zener Diodes, PD=0.35Watts, VZ=8.2V |
Comchip Technology |
| 69 |
CZRF52C9V1 |
Zener Diodes, PD=0.35Watts, VZ=9.1V |
Comchip Technology |
| 70 |
CZRF52C9V1-HF |
Halogen Free Zener Diodes, PD=0.35Watts, VZ=9.1V |
Comchip Technology |
| 71 |
IRF520 |
9.2A, 100V, 0.270 Ohm, N-Channel Power MOSFET Features |
Fairchild Semiconductor |
| 72 |
IRF520 |
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 73 |
IRF520 |
9.2A/ 100V/ 0.270 Ohm/ N-Channel Power MOSFET |
Intersil |
| 74 |
IRF520 |
Trans MOSFET N-CH 100V 9.2A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 75 |
IRF520 |
N-Channel Power MOSFET |
Samsung Electronic |
| 76 |
IRF520 |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 77 |
IRF520 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 78 |
IRF520 |
MOSPOWER N-Channel Enhancement Mode Transistor 100V 8A |
Siliconix |
| 79 |
IRF520 |
N-CHANNEL 100V - 0.115 OHM - 10A TO-220 LOW GATE CHARGE STRIPFET II POWER MOSFET |
ST Microelectronics |
| 80 |
IRF520 |
N - CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETs |
Supertex Inc |
| 81 |
IRF520A |
N-CHANNEL POWER MOSFET |
Fairchild Semiconductor |
| 82 |
IRF520CF |
Trans MOSFET N-CH 100V 9.7A 3-Pin(3+Tab) TO-220AB |
New Jersey Semiconductor |
| 83 |
IRF520FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 84 |
IRF520FI |
N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
SGS Thomson Microelectronics |
| 85 |
IRF520FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS |
ST Microelectronics |
| 86 |
IRF520L |
Power MOSFET(Vdss=100V/ Rds(on)=0.20ohm/ Id=9.7A) |
International Rectifier |
| 87 |
IRF520N |
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
| 88 |
IRF520NL |
HEXFET power MOSFET. VDSS = 100V, RDS(on) = 0.20 Ohm, ID = 9.7A |
International Rectifier |
| 89 |
IRF520NLPBF |
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package |
International Rectifier |
| 90 |
IRF520NPBF |
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package |
International Rectifier |
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