No. |
Part Name |
Description |
Manufacturer |
61 |
IRFD9210 |
-200V Single P-Channel HEXFET Power MOSFET in a HEXDIP package |
International Rectifier |
62 |
IRFD9220 |
-200V Single P-Channel HEXFET Power MOSFET in a HEXDIP package |
International Rectifier |
63 |
IRFD9220 |
0.6A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET |
Intersil |
64 |
IRFD9220 |
MOSPOWER P-Channel Enhancement Mode Transistor 200V 0.6A |
Siliconix |
65 |
IRFD9223 |
MOSPOWER P-Channel Enhancement Mode Transistor 150V 0.45A |
Siliconix |
66 |
IRFDC20 |
600V Single N-Channel HEXFET Power MOSFET in a HEXDIP package |
International Rectifier |
67 |
LNG801RFD |
Opto-Electronic Device - Visible Light Emitting Diodes - Point-Lighting LEDs |
Panasonic |
68 |
LNG816RFD |
Opto-Electronic Device - Visible Light Emitting Diodes - Point-Lighting LEDs |
Panasonic |
69 |
LNG820RFD |
Opto-Electronic Device - Visible Light Emitting Diodes - Point-Lighting LEDs |
Panasonic |
70 |
LNG838RFD |
Opto-Electronic Device - Visible Light Emitting Diodes - Point-Lighting LEDs |
Panasonic |
71 |
LNG842RFD |
Opto-Electronic Device - Visible Light Emitting Diodes - Point-Lighting LEDs |
Panasonic |
72 |
LNG849RFD |
Opto-Electronic Device - Visible Light Emitting Diodes - Point-Lighting LEDs |
Panasonic |
73 |
LNG850RFD |
Opto-Electronic Device - Visible Light Emitting Diodes - Point-Lighting LEDs |
Panasonic |
74 |
LNG873RFD |
Opto-Electronic Device - Visible Light Emitting Diodes - Point-Lighting LEDs |
Panasonic |
75 |
MAX6736XKRFD3-T |
Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
76 |
MAX6737XKRFD3-T |
Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
77 |
MAX6740XKRFD3-T |
Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
78 |
MAX6741XKRFD3-T |
Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
79 |
MAX6743XKRFD3-T |
Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
80 |
MAX6744XKRFD3-T |
Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit |
MAXIM - Dallas Semiconductor |
81 |
RFD10P03 |
10A/ 30V/ 0.200W/ Logic Level P-Channel Power MOSFET |
Fairchild Semiconductor |
82 |
RFD10P03L |
10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET |
Fairchild Semiconductor |
83 |
RFD10P03L |
10A/ 30V/ 0.200 Ohm/ Logic Level/ P-Channel Power MOSFET |
Intersil |
84 |
RFD10P03LSM |
10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET |
Fairchild Semiconductor |
85 |
RFD10P03LSM |
10A/ 30V/ 0.200 Ohm/ Logic Level/ P-Channel Power MOSFET |
Intersil |
86 |
RFD12N06RLE |
17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET |
Fairchild Semiconductor |
87 |
RFD12N06RLE |
12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs |
Intersil |
88 |
RFD12N06RLESM |
60V N-Channel Logic Level UltraFET PowerMOSFET |
Fairchild Semiconductor |
89 |
RFD12N06RLESM |
12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs |
Intersil |
90 |
RFD12N06RLESM9A |
60V N-Channel Logic Level UltraFET PowerMOSFET |
Fairchild Semiconductor |
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