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Datasheets for RFD

Datasheets found :: 175
Page: | 1 | 2 | 3 | 4 | 5 | 6 |
No. Part Name Description Manufacturer
61 IRFD9210 -200V Single P-Channel HEXFET Power MOSFET in a HEXDIP package International Rectifier
62 IRFD9220 -200V Single P-Channel HEXFET Power MOSFET in a HEXDIP package International Rectifier
63 IRFD9220 0.6A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET Intersil
64 IRFD9220 MOSPOWER P-Channel Enhancement Mode Transistor 200V 0.6A Siliconix
65 IRFD9223 MOSPOWER P-Channel Enhancement Mode Transistor 150V 0.45A Siliconix
66 IRFDC20 600V Single N-Channel HEXFET Power MOSFET in a HEXDIP package International Rectifier
67 LNG801RFD Opto-Electronic Device - Visible Light Emitting Diodes - Point-Lighting LEDs Panasonic
68 LNG816RFD Opto-Electronic Device - Visible Light Emitting Diodes - Point-Lighting LEDs Panasonic
69 LNG820RFD Opto-Electronic Device - Visible Light Emitting Diodes - Point-Lighting LEDs Panasonic
70 LNG838RFD Opto-Electronic Device - Visible Light Emitting Diodes - Point-Lighting LEDs Panasonic
71 LNG842RFD Opto-Electronic Device - Visible Light Emitting Diodes - Point-Lighting LEDs Panasonic
72 LNG849RFD Opto-Electronic Device - Visible Light Emitting Diodes - Point-Lighting LEDs Panasonic
73 LNG850RFD Opto-Electronic Device - Visible Light Emitting Diodes - Point-Lighting LEDs Panasonic
74 LNG873RFD Opto-Electronic Device - Visible Light Emitting Diodes - Point-Lighting LEDs Panasonic
75 MAX6736XKRFD3-T Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
76 MAX6737XKRFD3-T Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
77 MAX6740XKRFD3-T Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
78 MAX6741XKRFD3-T Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
79 MAX6743XKRFD3-T Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
80 MAX6744XKRFD3-T Vcc1: 2.625 V, Vcc2: 1.050 V, active timeout period: 150 ms-300 ms, low-power dual/triple-voltage mP supervisor circuit MAXIM - Dallas Semiconductor
81 RFD10P03 10A/ 30V/ 0.200W/ Logic Level P-Channel Power MOSFET Fairchild Semiconductor
82 RFD10P03L 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET Fairchild Semiconductor
83 RFD10P03L 10A/ 30V/ 0.200 Ohm/ Logic Level/ P-Channel Power MOSFET Intersil
84 RFD10P03LSM 10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET Fairchild Semiconductor
85 RFD10P03LSM 10A/ 30V/ 0.200 Ohm/ Logic Level/ P-Channel Power MOSFET Intersil
86 RFD12N06RLE 17A, 60V, 0.071 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Fairchild Semiconductor
87 RFD12N06RLE 12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs Intersil
88 RFD12N06RLESM 60V N-Channel Logic Level UltraFET PowerMOSFET Fairchild Semiconductor
89 RFD12N06RLESM 12A/ 60V/ 0.135 Ohm/ N-Channel/ Logic Level/ Power MOSFETs Intersil
90 RFD12N06RLESM9A 60V N-Channel Logic Level UltraFET PowerMOSFET Fairchild Semiconductor


Datasheets found :: 175
Page: | 1 | 2 | 3 | 4 | 5 | 6 |



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