| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1N661 |
General purpose low diode. Working inverse voltage 200V. |
Fairchild Semiconductor |
| 62 |
1S920 |
General purpose diode. Working inverse voltage 50 V. |
Fairchild Semiconductor |
| 63 |
1S921 |
General purpose diode. Working inverse voltage 100 V. |
Fairchild Semiconductor |
| 64 |
1SS239 |
Silicon epitaxial schottky barrier type diode, marking S1 |
TOSHIBA |
| 65 |
1SS241 |
Silicon Epitaxial Planar Type Diode, marking TY |
TOSHIBA |
| 66 |
1SS242 |
Silicon Epitaxial Schottky Barrier Type Diode for UHF band mixer applications, marking S2 |
TOSHIBA |
| 67 |
1SS371 |
Silicon epitaxial planar type diode for VHF tuner band switch applications, marking TY |
TOSHIBA |
| 68 |
1SV153A |
Silicon epitaxial planar type variable capacitance diode, marking T5 |
TOSHIBA |
| 69 |
1SV161 |
Silicon Epitaxial planar type variable capacitance diode, marking T2 |
TOSHIBA |
| 70 |
1SV186 |
Silicon Epitaxial planar type variable capacitance diode, marking T3 |
TOSHIBA |
| 71 |
1SV204 |
Silicon Epitaxial planar type variable capacitance diode, marking T4 |
TOSHIBA |
| 72 |
1SV211 |
Silicon Epitaxial planar type variable capacitance diode for CATV tuning, marking T6 |
TOSHIBA |
| 73 |
1SV212 |
Silicon Epitaxial planar type variable capacitance diode for VCO for UHF band radio, marking T8 |
TOSHIBA |
| 74 |
1SV224 |
Silicon Epitaxial planar type variable capacitance diode, marking T7 |
TOSHIBA |
| 75 |
1SV226 |
Silicon Epitaxial planar type variable capacitance diode, marking TA |
TOSHIBA |
| 76 |
1SV227 |
Silicon Epitaxial planar type variable capacitance diode for CATV tuning, marking T9 |
TOSHIBA |
| 77 |
1SV238 |
Silicon Epitaxial planar type variable capacitance diode, marking TB |
TOSHIBA |
| 78 |
1SV254 |
Silicon Epitaxial planar type variable capacitance diode for TV tuning, marking T1 |
TOSHIBA |
| 79 |
1SV255 |
Silicon Epitaxial planar type variable capacitance diode, marking T2 |
TOSHIBA |
| 80 |
1SV256 |
Silicon Epitaxial planar type variable capacitance diode, marking T4 |
TOSHIBA |
| 81 |
1SV258 |
Silicon Epitaxial planar type variable capacitance diode, case 1-1F1A, marking T7 |
TOSHIBA |
| 82 |
1SV259 |
Silicon Epitaxial planar type variable capacitance diode, marking T9 |
TOSHIBA |
| 83 |
1SV260 |
Silicon Epitaxial planar type variable capacitance diode, marking TC |
TOSHIBA |
| 84 |
1SV261 |
Silicon Epitaxial planar type variable capacitance diode, marking T3 |
TOSHIBA |
| 85 |
1SV274 |
Silicon Epitaxial planar type variable capacitance diode, marking TD |
TOSHIBA |
| 86 |
1SV275 |
Silicon Epitaxial planar type variable capacitance diode, marking TE |
TOSHIBA |
| 87 |
1X |
Marking for NE68035 part number, 35 NEC (MICRO-X) package, X=LOT CODE |
NEC |
| 88 |
2002A |
Marking for NE73432 part number, 32 NEC (TO-92) package |
NEC |
| 89 |
200D,202D |
Wet Tantalum Capacitors, Wet Sintered Anode Components, Capacitor Assemblies, Type 202D Designed to Meet the Performance and Marking Requirements of Military Style CL55 in Accordance with MIL-DTL-3965 |
Vishay |
| 90 |
219 |
Marking for NE21903(D) part number, 03 NEC package |
NEC |
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