| No. |
Part Name |
Description |
Manufacturer |
| 61 |
ATF10136 |
0.5-12 GHz Low Noise Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 62 |
ATF10236 |
0.5?12 GHz Low Noise Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 63 |
ATF10736 |
0.5?12 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 64 |
ATF13786 |
Surface Mount Gallium Arsenide FET for Oscillators |
Agilent (Hewlett-Packard) |
| 65 |
ATF26884 |
2-16 GHz General Purpose Gallium Arsenide FET |
Agilent (Hewlett-Packard) |
| 66 |
CAY10 |
Gallium arsenide diode, diffused mesa type, for use in microwave parametric amplifiers, frequency multipliers and switches |
Mullard |
| 67 |
CGY11A |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
| 68 |
CGY11B |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
| 69 |
CGY12A |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
| 70 |
CGY12B |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
| 71 |
CGY13A |
Gallium arsenide gunn device for x band oscillators (CW-operation) |
AEG-TELEFUNKEN |
| 72 |
CLED155 |
Gallium Aluminum Arsenide Infrared Emitting Diode |
Clairex Technologies |
| 73 |
CLED155F |
Gallium Aluminum Arsenide Infrared Emitting Diode |
Clairex Technologies |
| 74 |
CLED400 |
3 V, 50 mA, gallium arsenide infrared emitting diode |
Clairex Technologies |
| 75 |
CLED405 |
3 V, 60 mA, gallium aluminum arsenide infrared emitting diode |
Clairex Technologies |
| 76 |
CLI800W |
This optical switch couples a gallium arsenide infrared emitting diode |
Clairex Technologies |
| 77 |
CLI810W |
This optical switch couples a gallium arsenide infrared emitting diode |
Clairex Technologies |
| 78 |
CLI820W |
This optical switch couples a gallium arsenide infrared emitting diode |
Clairex Technologies |
| 79 |
CLI830W |
This optical switch couples a gallium arsenide infrared emitting diode |
Clairex Technologies |
| 80 |
CLI835W |
This optical switch couples a gallium arsenide infrared emitting diode |
Clairex Technologies |
| 81 |
CQY10 |
Gallium arsenide luminiscence diode, infrared source for high modulation frequencies. The spectral emission is in range of the spectral sensitivity of silicon photoelektronic devices |
AEG-TELEFUNKEN |
| 82 |
CXY10 |
Gallium arsenide diode with a high cut-off frequency for use in parametric amplifers, frequency multipliers and switches |
Mullard |
| 83 |
CXY12 |
Gallium arsenide diode with a high cut-off frequency for use in frequency multipliers up to Q-Band |
Mullard |
| 84 |
DGS10-015A |
150V gallium arsenide schottky rectifier |
IXYS |
| 85 |
DGS10-015BS |
150V gallium arsenide schottky rectifier |
IXYS |
| 86 |
DGS10-018A |
180V gallium arsenide schottky rectifier |
IXYS |
| 87 |
DGS10-018BS |
180V gallium arsenide schottky rectifier |
IXYS |
| 88 |
DGS10-022A |
220V gallium arsenide schottky rectifier |
IXYS |
| 89 |
DGS10-022AS |
220V gallium arsenide schottky rectifier |
IXYS |
| 90 |
DGS10-025A |
250V gallium arsenide schottky rectifier |
IXYS |
| | | |
