No. |
Part Name |
Description |
Manufacturer |
61 |
25L01B |
256x1 static Read/Write Random Access Memory |
Signetics |
62 |
25L01I |
256x1 static Read/Write Random Access Memory |
Signetics |
63 |
27C256 |
MOS Memories |
Atmel |
64 |
2FO-57C |
2FO57C Package Dimensions Mecanical Data |
Philips |
65 |
2SA1160 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
66 |
2SA1300 |
Transistor Silicon PNP Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
67 |
2SA1431 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
68 |
2SA1893 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) STROBE FLASH APPLICATIONS MEDIUM POWER AMPLIFIER APPLICATIONS |
TOSHIBA |
69 |
2SC2982 |
Transistor Silicon NPN Epitaxial Type (PCT process) Storobo Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
70 |
2SC3072 |
Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
71 |
2SC3279 |
Transistor Silicon NPN Epitaxial Type (PCT process) Strobe Flash Applications Medium Power Amplifier Applications |
TOSHIBA |
72 |
2SK354A |
General purpose GaAs MESFET (This datasheet of the NE72089A is also the datasheet of 2SK354A, see the Electrical Characteristics table) |
NEC |
73 |
2SK407 |
Low noise Ku-K band GaAs MESFET for HI REL applications only (This datasheet of NE67383 is also the datasheet of 2SK407, see the Electrical Characteristics table) |
NEC |
74 |
40RIF100W |
V(rrm): 1000V; 40A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers |
International Rectifier |
75 |
40RIF120W |
V(rrm): 1200V; 40A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers |
International Rectifier |
76 |
50RIF100W |
V(rrm): 1000V; 50A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers |
International Rectifier |
77 |
50RIF120W |
V(rrm): 1200V; 50A RMS medium power fast turn-off thyristor. For inverters, switch mode power supplies and choppers |
International Rectifier |
78 |
50S116T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
79 |
50S116T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
80 |
50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
81 |
5489 |
64-BIT random access memory (With Open-Collector Outputs) |
Fairchild Semiconductor |
82 |
54F189 |
64-Bit Random Access Memory With 3-State Outputs |
Fairchild Semiconductor |
83 |
54F189 |
64-Bit Random Access Memory with TRI-STATE Outputs |
National Semiconductor |
84 |
54F189DC |
64-Bit Random Access Memory with TRI-STATE Outputs |
National Semiconductor |
85 |
54F189DL |
64-Bit Random Access Memory with TRI-STATEE Outputs |
National Semiconductor |
86 |
54F189DLQB |
64-Bit Random Access Memory with TRI-STATE Outputs |
National Semiconductor |
87 |
54F189DLQB |
64-Bit Random Access Memory with TRI-STATE Outputs |
National Semiconductor |
88 |
54F189FL |
64-Bit Random Access Memory with TRI-STATEE Outputs |
National Semiconductor |
89 |
54F189LL |
64-Bit Random Access Memory with TRI-STATEE Outputs |
National Semiconductor |
90 |
54F211 |
144-Bit Random Access Memory With 3-State Outputs |
Fairchild Semiconductor |
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