No. |
Part Name |
Description |
Manufacturer |
61 |
D2-81435 |
DAE-1 for Manufacturers of High-Performance Class-D Audio Amplifiers for Use with D2Audio X-Series Reference Designs |
Intersil |
62 |
ELAN SC310 |
Elan SC310 Programmer's Reference Manual |
Advanced Micro Devices |
63 |
ELANSC300 |
ElanSC300 Microcontroller Programmer's Reference Manual |
Advanced Micro Devices |
64 |
KM416C254DJ-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, 8ms refresh period |
Samsung Electronic |
65 |
KM416C254DJ-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period |
Samsung Electronic |
66 |
KM416C254DJ-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period |
Samsung Electronic |
67 |
KM416C254DT-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, 8ms refresh period |
Samsung Electronic |
68 |
KM416C254DT-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, 8ms refresh period |
Samsung Electronic |
69 |
KM416C254DT-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, 8ms refresh period |
Samsung Electronic |
70 |
KM416V254DJ-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period |
Samsung Electronic |
71 |
KM416V254DJ-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period |
Samsung Electronic |
72 |
KM416V254DJ-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period |
Samsung Electronic |
73 |
KM416V254DT-5 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, 8ms refresh period |
Samsung Electronic |
74 |
KM416V254DT-6 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, 8ms refresh period |
Samsung Electronic |
75 |
KM416V254DT-7 |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, 8ms refresh period |
Samsung Electronic |
76 |
KM41C4000DJ-5 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 50ns |
Samsung Electronic |
77 |
KM41C4000DJ-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 60ns |
Samsung Electronic |
78 |
KM41C4000DJ-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 70ns |
Samsung Electronic |
79 |
KM41C4000DLJ-5 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 50ns |
Samsung Electronic |
80 |
KM41C4000DLJ-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 60ns |
Samsung Electronic |
81 |
KM41C4000DLJ-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 70ns |
Samsung Electronic |
82 |
KM41C4000DLT-5 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 50ns |
Samsung Electronic |
83 |
KM41C4000DLT-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 60ns |
Samsung Electronic |
84 |
KM41C4000DLT-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 128ms refresh, 70ns |
Samsung Electronic |
85 |
KM41C4000DT-5 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 50ns |
Samsung Electronic |
86 |
KM41C4000DT-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 60ns |
Samsung Electronic |
87 |
KM41C4000DT-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 5V, 16ms refresh, 70ns |
Samsung Electronic |
88 |
KM41V4000DJ-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 16ms refresh, 60ns |
Samsung Electronic |
89 |
KM41V4000DJ-7 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 16ms refresh, 70ns |
Samsung Electronic |
90 |
KM41V4000DLJ-6 |
4M x 1Bit CMOS dynamic RAM with fast page mode, 3.3V, 128ms refresh, 60ns |
Samsung Electronic |
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