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Datasheets for S SY

Datasheets found :: 2239
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No. Part Name Description Manufacturer
61 AD9851BRSZRL 180 MHz Complete DDS synthesizer Analog Devices
62 AD9852 CMOS 300 MHz Complete-DDS Synthesizer Analog Devices
63 AD9854 CMOS 300 MHz Quadrature Complete-DDS Synthesizer Analog Devices
64 ADM1060 Communications System Supervisory/Sequencing Circuit Analog Devices
65 AM1517-035 High Power CW transistor designed to operate within a 50MHz increment of the 1.5-1.7GHz, GPS and Inmarsat satellite comunications systems SGS Thomson Microelectronics
66 AN1506 A MOTOR DRIVES SYSTEM FOR WHEELCHAIR APPLICATIONS SGS Thomson Microelectronics
67 AS4LC1M16S1 3.3V 2Mx8 / 1Mx16 CMOS synchronous DRAM Alliance Semiconductor
68 AS4LC2M8S1 3.3V 2Mx8 / 1Mx16 CMOS synchronous DRAM Alliance Semiconductor
69 AS4LC4M16S0 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Alliance Semiconductor
70 AS4LC4M16S0 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Alliance Semiconductor
71 AS4LC4M16S0-10FTC 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Alliance Semiconductor
72 AS4LC4M16S0-10TC 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Alliance Semiconductor
73 AS4LC4M16S0-75TC 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Alliance Semiconductor
74 AS4LC4M16S0-8TC 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Alliance Semiconductor
75 AS4LC8M8S0 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Alliance Semiconductor
76 AS4LC8M8S0 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Alliance Semiconductor
77 AS4LC8M8S0-10FTC 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Alliance Semiconductor
78 AS4LC8M8S0-10TC 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Alliance Semiconductor
79 AS4LC8M8S0-75TC 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Alliance Semiconductor
80 AS4LC8M8S0-8TC 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Alliance Semiconductor
81 BFG196 RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz Infineon
82 BFG19S RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz Infineon
83 BFG235 RF-Bipolar - For low-distortion broadband output amplifier stages in wireless systems up to 2 GHz Infineon
84 BFP194 PNP Silicon RF Transistor (For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents) Siemens
85 BFP196 RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz Infineon
86 BFP196W RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz Infineon
87 BFQ19S RF-Bipolar - For low noise, low distortion broadband amplifiers in wireless systems up to 1.5 GHz Infineon
88 BFQ70 NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA) Siemens
89 BFQ73 NPN SILICON RF TRANSISTOR (FOR LOW-NOISE/ LOW-DISTORTION BROADBAND AMPLIFIERS IN ANTENNA AND TELECOMMUNICATIONS SYSTEMS UP TO 2GHz) Siemens
90 BFQ73S NPN SILICON RF TRANSISTOR (FOR LOW-NOISE, LOW-DISTORTION BROADBAND AMPLIFIERS IN ANTENNA AND TELECOMMUNICATIONS SYSTEMS UP TO 2GHz) Siemens


Datasheets found :: 2239
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