| No. |
Part Name |
Description |
Manufacturer |
| 61 |
ELL6SH2R0M |
Power Inductors for Consumer - Magnetic shielded Ferrite core type(6mm)(2) |
Panasonic |
| 62 |
ELL6SH2R7M |
Power Inductors for Consumer - Magnetic shielded Ferrite core type(6mm)(2) |
Panasonic |
| 63 |
ESH2B |
Discrete Devices -Diode-Ultra Fast Rectifier |
Taiwan Semiconductor |
| 64 |
ESH2BA |
Discrete Devices -Diode-Ultra Fast Rectifier |
Taiwan Semiconductor |
| 65 |
ESH2C |
Discrete Devices -Diode-Ultra Fast Rectifier |
Taiwan Semiconductor |
| 66 |
ESH2CA |
Discrete Devices -Diode-Ultra Fast Rectifier |
Taiwan Semiconductor |
| 67 |
ESH2D |
Discrete Devices -Diode-Ultra Fast Rectifier |
Taiwan Semiconductor |
| 68 |
ESH2DA |
Discrete Devices -Diode-Ultra Fast Rectifier |
Taiwan Semiconductor |
| 69 |
HSH2000NIEO |
Lamps for Photolithography |
PerkinElmer Optoelectronics |
| 70 |
HSH2001CIEO |
Lamps for Photolithography |
PerkinElmer Optoelectronics |
| 71 |
HSH2001NIELO |
Lamps for Photolithography |
PerkinElmer Optoelectronics |
| 72 |
HSH2001NIEO |
Lamps for Photolithography |
PerkinElmer Optoelectronics |
| 73 |
HSH2002NIEO |
Lamps for Photolithography |
PerkinElmer Optoelectronics |
| 74 |
HSH2011NIEO |
Lamps for Photolithography |
PerkinElmer Optoelectronics |
| 75 |
HSH2501NIL0 |
Lamps for Photolithography |
PerkinElmer Optoelectronics |
| 76 |
HSH2501NILO |
Lamp for photolithography. Power 2500 watts, current 109 amps(DC), voltage 23 volts(DC). Temperature(at base) 220degC(max). |
PerkinElmer Optoelectronics |
| 77 |
HSH2510NIL0 |
Lamps for Photolithography |
PerkinElmer Optoelectronics |
| 78 |
HSH2510NILO |
Lamp for photolithography. Power 2500 watts, current 109 amps(DC), voltage 23 volts(DC). Temperature(at base) 220degC(max). |
PerkinElmer Optoelectronics |
| 79 |
IXSH24N60 |
IGBT Discretes: Low Saturation Voltage Types |
IXYS |
| 80 |
IXSH24N60AU1 |
HiPerFASTTM IGBT with Diode |
IXYS Corporation |
| 81 |
IXSH24N60U1 |
HiPerFASTTM IGBT with Diode |
IXYS Corporation |
| 82 |
IXSH25N120A |
IGBT |
IXYS Corporation |
| 83 |
IXSH25N120AU1 |
IGBT with Diode |
IXYS Corporation |
| 84 |
JANSH2N2221A |
BJT( BiPolar Junction Transistor) |
Microsemi |
| 85 |
JANSH2N2221AL |
BJT( BiPolar Junction Transistor) |
Microsemi |
| 86 |
JANSH2N2221AUA |
BJT( BiPolar Junction Transistor) |
Microsemi |
| 87 |
JANSH2N2221AUB |
BJT( BiPolar Junction Transistor) |
Microsemi |
| 88 |
JANSH2N2221AUBC |
BJT( BiPolar Junction Transistor) |
Microsemi |
| 89 |
JANSH2N2222A |
BJT( BiPolar Junction Transistor) |
Microsemi |
| 90 |
JANSH2N2222AL |
BJT( BiPolar Junction Transistor) |
Microsemi |
| | | |
