| No. |
Part Name |
Description |
Manufacturer |
| 61 |
BSV51 |
Silicon NPN epitaxial planar transistor with high reverse collector base voltage, especially for indicator tube driver stages and for relaise driver stages |
AEG-TELEFUNKEN |
| 62 |
BSW88 |
Silicon NPN epitaxial planar switching transistor with high forward current transfer ratio |
AEG-TELEFUNKEN |
| 63 |
BSW89 |
Silicon NPN epitaxial planar switching transistor with high forward current transfer ratio |
AEG-TELEFUNKEN |
| 64 |
BSX38 |
Silicon NPN epitaxial planar switching transistor with high current gain |
AEG-TELEFUNKEN |
| 65 |
BSX81 |
Silicon NPN epitaxial planar switching transistor with high forward current transfer ratio |
AEG-TELEFUNKEN |
| 66 |
BSY79 |
NPN silicon epitaxy planar transistor with high collector-emitter voltage, suitable as a driver transistor for number display glow tubes |
ITT Semiconductors |
| 67 |
BSY92 |
Silicon NPN planar transistor with medium reverse voltage for switching and RF applications |
AEG-TELEFUNKEN |
| 68 |
BSY93 |
Silicon NPN epitaxial planar transistor with medium reverse voltage for switching and RF applications |
AEG-TELEFUNKEN |
| 69 |
BU126 |
NPN Silicon Power Transistor with a high reverse voltage |
Siemens |
| 70 |
BU208 |
NPN Silicon Power Transistor with 1500V reverse voltage |
Siemens |
| 71 |
BU208D |
NPN, horizontal deflection transistor with integrated damper diode. Vceo = 700Vdc, Vces = 1500Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 60W. |
USHA India LTD |
| 72 |
BU406D |
Silicon planar epitaxial NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 73 |
BU407D |
Silicon planar epitaxial NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 74 |
BU408D |
Silicon planar epitaxial NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 75 |
BU606D |
Silicon epitaxial planar NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 76 |
BU607D |
Silicon epitaxial planar NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 77 |
BU608D |
Silicon epitaxial planar NPN transistor with integrated damper diode for use in horizontal TV deflectors |
SGS-ATES |
| 78 |
BUD42DT4 |
High Speed/ High Gain Bipolar NPN Transistor with Antisaturation Network and Transient Voltage Suppression Capability |
ON Semiconductor |
| 79 |
BUD44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS |
ON Semiconductor |
| 80 |
BUL44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network |
ON Semiconductor |
| 81 |
BUL45D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network |
ON Semiconductor |
| 82 |
BULD125KC |
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
Power Innovations |
| 83 |
BULD125KC |
600 V, NPN silicon transistor with integrated diode |
TRANSYS Electronics Limited |
| 84 |
BULD125KC |
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
TRSYS |
| 85 |
BULD25 |
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
Power Innovations |
| 86 |
BULD25D |
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
Power Innovations |
| 87 |
BULD25DR |
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
Power Innovations |
| 88 |
BULD25SL |
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
Power Innovations |
| 89 |
BULD50 |
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
Power Innovations |
| 90 |
BULD50KC |
NPN SILICON TRANSISTOR WITH INTEGRATED DIODE |
Power Innovations |
| | | |
