No. |
Part Name |
Description |
Manufacturer |
61 |
2SC481 |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
62 |
2SC502 |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
63 |
2SC520A |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
64 |
2SC521A |
High-Frequency Transistor RF POWER AMP |
TOSHIBA |
65 |
AN-6229 |
Microwave Power-Transistor Reliability as a Function of Current Denisity and Junction Temperature - Application Note |
RCA Solid State |
66 |
BA379 |
Silicon PIN Diode, serving as variable RF resistor recommended for use in AGC networks in VHF-UHF TV tuners |
Siemens |
67 |
CT60AM-18B |
MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR RESONANT INVERTER USE |
Mitsubishi Electric Corporation |
68 |
DS_K1S161611A |
1Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
69 |
DS_K1S16161CA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
70 |
FJH301/7426N |
Quadruple 4-input NAND gate with open collector output transistor rated at 15V |
Mullard |
71 |
FJH311/7401AN |
Quadruple 4-input NAND gate with open collector output transistor rated at 15V |
Mullard |
72 |
FJH321/7405AN |
Sextuple single-input inverter gate with open collector output transistor rated at 15V |
Mullard |
73 |
K1B6416B6C |
4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory |
Samsung Electronic |
74 |
K1S161611A |
1Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
75 |
K1S161611A-I |
1Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
76 |
K1S16161CA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
77 |
K1S16161CA-I |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
78 |
K1S1616BCA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
79 |
K1S321611C |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
80 |
K1S321611C-FI70 |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
81 |
K1S321611C-I |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
82 |
K1S32161CC |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
83 |
K1S32161CC-FI70 |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
84 |
K1S32161CC-I |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
85 |
K1S3216B1C |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
86 |
K1S3216B1C-I |
2Mx16 bit Uni-Transistor Random Access Memory |
Samsung Electronic |
87 |
K1S3216BCD |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
88 |
K1S64161CC |
4Mx16 bit Page Mode Uni-Transistor Random Access Memory |
Samsung Electronic |
89 |
LT3081 |
1.5A Single Resistor Rugged Linear Regulator with Monitors |
Linear Technology |
90 |
LT3081EDF#PBF |
1.5A Single Resistor Rugged Linear Regulator with Monitors |
Linear Technology |
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