No. |
Part Name |
Description |
Manufacturer |
61 |
STP30NF10 |
N-CHANNEL 100V 0.038 OHM 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STRIPFET POWER II MOSFET |
ST Microelectronics |
62 |
STP30NF10FP |
N-CHANNEL 100V 0.038 OHM 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STRIPFET POWER II MOSFET |
SGS Thomson Microelectronics |
63 |
STP30NF10FP |
N-CHANNEL 100V 0.038 OHM 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STRIPFET POWER II MOSFET |
ST Microelectronics |
64 |
STP30NF20 |
N-channel 200 V, 0.065 Ohm, 30 A, TO-220 STripFET(TM) Power MOSFET |
ST Microelectronics |
65 |
STP30NM30N |
N-channel 300V - 0.078Ohm - 30A - TO-220 |
ST Microelectronics |
66 |
STP30NS15L |
N-CHANNEL 150V - 0.085 OHM - 10A TO-220FP MESH OVERLAY POWER MOSFET |
ST Microelectronics |
67 |
STP30NS15LFP |
N-CHANNEL 150V - 0.085 OHM - 10A TO-220FP MESH OVERLAY POWER MOSFET |
ST Microelectronics |
68 |
STP310N10F7 |
N-channel 100 V, 2.3 mOhm typ., 180 A STripFET(TM) VII DeepGATE(TM) Power MOSFET in a TO-220 package |
ST Microelectronics |
69 |
STP315N10F7 |
Automotive-grade N-channel 100 V, 2.3 mOhm typ., 180 A STripFET F7 Power MOSFET in a TO-220 package |
ST Microelectronics |
70 |
STP31N65M5 |
N-channel 650 V, 0.124 Ohm, 22 A MDmesh(TM) V Power MOSFET in TO-220 package |
ST Microelectronics |
71 |
STP32N05L |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
72 |
STP32N05L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
73 |
STP32N05L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
74 |
STP32N05LFI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
75 |
STP32N06 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
ST Microelectronics |
76 |
STP32N06L |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
77 |
STP32N06L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
78 |
STP32N06L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
79 |
STP32N06LFI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
80 |
STP32N06LFI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
81 |
STP32N06LFI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
82 |
STP32N65M5 |
N-channel 650 V, 0.095 Ohm, 24 A, MDmesh(TM) V Power MOSFET in TO-220 |
ST Microelectronics |
83 |
STP32NM50N |
N-channel 500 V, 0.1 Ohm typ., 22 A MDmesh(TM) II Power MOSFET in TO-220 package |
ST Microelectronics |
84 |
STP33N10 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
85 |
STP33N10 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
86 |
STP33N10 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
87 |
STP33N10FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
88 |
STP33N10FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
89 |
STP33N10FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
90 |
STP33N60M2 |
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh II Plus(TM) low Qg Power MOSFETs in TO-220 package |
ST Microelectronics |
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