| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1N5951C |
1.5 W, silicon zener diode. Zener voltage 120 V. Test current 3.1 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 62 |
1N5951D |
1.5 W, silicon zener diode. Zener voltage 120 V. Test current 3.1 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 63 |
1N973 |
0.5W, silicon zener diode. Zener voltage 33V. Test current 3.8mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 64 |
1N973A |
0.5W, silicon zener diode. Zener voltage 33V. Test current 3.8mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 65 |
1N974 |
0.5W, silicon zener diode. Zener voltage 36V. Test current 3.4mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 66 |
1N974A |
0.5W, silicon zener diode. Zener voltage 36V. Test current 3.4mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 67 |
1N975 |
0.5W, silicon zener diode. Zener voltage 39V. Test current 3.2mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 68 |
1N975A |
0.5W, silicon zener diode. Zener voltage 39V. Test current 3.2mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 69 |
1N976 |
0.5W, silicon zener diode. Zener voltage 43V. Test current 3.0mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 70 |
1N976A |
0.5W, silicon zener diode. Zener voltage 43V. Test current 3.0mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 71 |
28F004S3 |
BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT |
Intel |
| 72 |
28F004S3 |
BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT |
Intel |
| 73 |
28F008B3 |
SMART 3 ADVANCED BOOT BLOCK, 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
Intel |
| 74 |
28F008B3 |
SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE, 8-MBIT (1024K x 8), 16-MBIT (2056K x 8) FLASH MEMORY FAMILY |
Intel |
| 75 |
28F008S3 |
BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT |
Intel |
| 76 |
28F008S3 |
BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT |
Intel |
| 77 |
28F016B3 |
SMART 3 ADVANCED BOOT BLOCK, 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
Intel |
| 78 |
28F016B3 |
SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE, 8-MBIT (1024K x 8), 16-MBIT (2056K x 8) FLASH MEMORY FAMILY |
Intel |
| 79 |
28F016S3 |
BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT |
Intel |
| 80 |
28F016S3 |
BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT |
Intel |
| 81 |
28F032B3 |
SMART 3 ADVANCED BOOT BLOCK, 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
Intel |
| 82 |
28F160B3 |
SMART 3 ADVANCED BOOT BLOCK, 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
Intel |
| 83 |
28F320B3 |
SMART 3 ADVANCED BOOT BLOCK, 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
Intel |
| 84 |
28F400B3 |
SMART 3 ADVANCED BOOT BLOCK, 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
Intel |
| 85 |
28F800B3 |
SMART 3 ADVANCED BOOT BLOCK, 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
Intel |
| 86 |
2N4427 |
ft min 500 MHz hfe min 10 Transistor polarity NPN Current Ic continuous max 0.5 A Voltage Vcbo 40 V Voltage Vceo 20 V Current Ic (hfe) 100 mA Power Ptot 3.5 W |
SGS Thomson Microelectronics |
| 87 |
2N6386 |
10 A N-P-N darlington power transistor. 40 V. 65 W. Gain of 1000 at 3 A. |
General Electric Solid State |
| 88 |
2N6531 |
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A. |
General Electric Solid State |
| 89 |
2N6533 |
8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A. |
General Electric Solid State |
| 90 |
2N6666 |
10 A P-N-P darlington power transistor. -40 V. 65 W. Gain of 1000 at 3 A. |
General Electric Solid State |
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