No. |
Part Name |
Description |
Manufacturer |
61 |
STD150 ASIC |
STD150 Brochure Rev. 1.0 |
Samsung Electronic |
62 |
STD150 ASIC |
Introduction(Jan. 22, 2002) |
Samsung Electronic |
63 |
STD150 ASIC |
Primitive Overview |
Samsung Electronic |
64 |
STD150 ASIC |
I/O IP Cells |
Samsung Electronic |
65 |
STD150 ASIC |
Timmings |
Samsung Electronic |
66 |
STD150 ASIC |
High Density Memories |
Samsung Electronic |
67 |
STD150 ASIC |
Characteristics(Jan. 22, 2002) |
Samsung Electronic |
68 |
STD150 ASIC |
Package Capabilities |
Samsung Electronic |
69 |
STD150 ASIC |
Glossary of analog terms |
Samsung Electronic |
70 |
STD150 ASIC |
PLL2108X (Jan. 17, 2002) |
Samsung Electronic |
71 |
STD150 ASIC |
Primitive Flip/Flops |
Samsung Electronic |
72 |
STD150 ASIC |
Primitive Logic Cells |
Samsung Electronic |
73 |
STD150 ASIC |
Maximum Fanouts |
Samsung Electronic |
74 |
STD150N3LLH6 |
N-channel 30 V, 0.0024 Ohm, 80 A, DPAK Power MOSFET |
ST Microelectronics |
75 |
STD150NH02L |
N-CHANNEL 24V - 0.0033 OHM - 150A CLIPPAK/IPAK STRIPFET III MOSFET FOR DC-DC CONVERSION |
SGS Thomson Microelectronics |
76 |
STD150NH02L |
N-CHANNEL 24V - 0.0033 OHM - 150A CLIPPAK/IPAK STRIPFET III MOSFET FOR DC-DC CONVERSION |
ST Microelectronics |
77 |
STD150NH02L-1 |
N-CHANNEL 24V - 0.003 OHM - 150A CLIPPAK/IPAK STRIPFET III MOSFET |
ST Microelectronics |
78 |
STD150NH02LT4 |
N-CHANNEL 24V - 0.003 OHM - 150A CLIPPAK/IPAK STRIPFET III MOSFET |
ST Microelectronics |
79 |
STD155N3H6 |
N-channel 30 V, 2.5 mOhm, 80 A, DPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET |
ST Microelectronics |
80 |
STD155N3LH6 |
N-channel 30 V, 0.0024 Ohm, 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in DPAK package |
ST Microelectronics |
81 |
STD15N06 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
82 |
STD15N06 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
83 |
STD15N06 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
84 |
STD15N06L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
85 |
STD15N06L |
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
86 |
STD15N06L |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
87 |
STD15N65M5 |
N-channel 650 V, 0.308 Ohm, 11 A MDmesh(TM) V Power MOSFET in DPAK package |
ST Microelectronics |
88 |
STD15NF10 |
N-CHANNEL 100V - 0.060 OHM - 23A DPAK LOW GATE CHARGE STRIPFET II POWER MOSFET |
SGS Thomson Microelectronics |
89 |
STD15NF10 |
N - CHANNEL 100V - 0.073Ohm - 15A TO-252 LOW GATE CHARGE STripFET POWER MOSFET |
SGS Thomson Microelectronics |
90 |
STD15NF10 |
N-CHANNEL 100V - 0.060 OHM - 23A DPAK LOW GATE CHARGE STRIPFET II POWER MOSFET |
ST Microelectronics |
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