| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1S755H |
Silicon Alloyed Junction, Zener Diode Vz=4.3...5.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 62 |
1S756H |
Silicon Difused Junction, Zener Diode Vz=5.2...6.4 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 63 |
1S757H |
Silicon Difused Junction, Zener Diode Vz=6.2...8.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 64 |
1S758H |
Silicon Difused Junction, Zener Diode Vz=7.5...10.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 65 |
1S759H |
Silicon Difused Junction, Zener Diode Vz=9.0...12.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 66 |
1S760H |
Silicon Difused Junction, Zener Diode Vz=11.0...14.5 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 67 |
1S761H |
Silicon Difused Junction, Zener Diode Vz=13.5...18.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 68 |
1S762H |
Silicon Difused Junction, Zener Diode Vz=17.0...21.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 69 |
1S763H |
Silicon Difused Junction, Zener Diode Vz=20.0...27.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 70 |
1S764H |
Silicon Difused Junction, Zener Diode Vz=25.0...32.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 71 |
1S765H |
Silicon Difused Junction, Zener Diode Vz=30.0...39.0 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 72 |
1S77H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| 73 |
1S78H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| 74 |
1S79H |
Germanium Gold Bond Diode, intended for use in High Transfer Medium Speed Switching |
Hitachi Semiconductor |
| 75 |
1S80 |
Germanium Point Contact Diode, intended for use as a General Detector |
Hitachi Semiconductor |
| 76 |
1SV128 |
DIODE VHF~UHF BAND RF ATTENUATOR APPLICATIONS |
TOSHIBA |
| 77 |
1SV237 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications |
TOSHIBA |
| 78 |
1SV252 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications |
TOSHIBA |
| 79 |
1SV268 |
Transmitting, Receiving Antenna-switch Use PIN Diode Silicon Epitaxial Type |
SANYO |
| 80 |
1SV271 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications |
TOSHIBA |
| 81 |
1SV272 |
Transmitting, Receiving Antenna-switch Use PIN Diode Silicon Epitaxial Type |
SANYO |
| 82 |
1SV294 |
Variable Resistance Attenuator Use |
SANYO |
| 83 |
1SV298 |
pi Type Attenuator Applications |
SANYO |
| 84 |
1SV312 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications |
TOSHIBA |
| 85 |
1SV315 |
Variabe resistance Attenuator Use |
SANYO |
| 86 |
1SV316 |
Variabe resistance Attenuator Use |
SANYO |
| 87 |
2082-6040-00 |
2 Watt, DC-18 GHz, Fixed coaxial attenuator |
MA-Com |
| 88 |
2082-6040-00 |
Fixed Coaxial Attenuators |
Tyco Electronics |
| 89 |
2082-6040-01 |
2 Watt, DC-18 GHz, Fixed coaxial attenuator |
MA-Com |
| 90 |
2082-6040-01 |
Fixed Coaxial Attenuators |
Tyco Electronics |
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