No. |
Part Name |
Description |
Manufacturer |
61 |
KD2002-CF10A |
Thermal Printheads / for Gaming Equipment,ATMs |
ROHM |
62 |
KD2002-CG10A |
Thermal Printheads / for Gaming Equipment,ATMs |
ROHM |
63 |
KD2003-CF10A |
Thermal Printheads / for Gaming Equipment,ATMs |
ROHM |
64 |
KD2003-CF30A |
Thermal Printheads / for Gaming Equipment,ATMs |
ROHM |
65 |
KD2003-CG10A |
Thermal Printheads / for Gaming Equipment,ATMs |
ROHM |
66 |
KD2004-CF10A |
Thermal Printheads / for Gaming Equipment,ATMs |
ROHM |
67 |
KD2004-CF20A |
Thermal Printheads / for Gaming Equipment,ATMs |
ROHM |
68 |
KD2004-CG10A |
Thermal Printheads / for Gaming Equipment,ATMs |
ROHM |
69 |
KD2008-CF10A |
Thermal Printheads / for Gaming Equipment,ATMs |
ROHM |
70 |
KD2008-CG50A |
Thermal Printheads / for Gaming Equipment,ATMs |
ROHM |
71 |
KD3008-CF10A |
Thermal Printheads / for Gaming Equipment,ATMs |
ROHM |
72 |
MAX6715UTMSD3-T |
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
73 |
MAX6716UTMSD3-T |
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
74 |
MAX6719UTMSD1+ |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
75 |
MAX6719UTMSD1+T |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
76 |
MAX6719UTMSD3-T |
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
77 |
MAX6720UTMSD3-T |
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
78 |
MAX6721UTMSD3-T |
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
79 |
MAX6722UTMSD3-T |
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
80 |
MAX6723UTMSD3-T |
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
81 |
MAX6724UTMSD3-T |
Vcc1: 4.375 V,Vcc2: 2.925 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
82 |
MMSF3P03HD |
OBSOLETE - REPLACEMENT P/N# - NTMS3P03R2 |
ON Semiconductor |
83 |
MMSF4205 |
OBSOLETE - REPLACEMENT PN# - NTMS10P02R2 |
ON Semiconductor |
84 |
MMSF4N01HD |
OBSOLETE - REPLACEMENT P/N# - NTMS4N01R2 |
ON Semiconductor |
85 |
MMSF7N03HD |
OBSOLETE - REPLACEMENT P/N NTMS7N03R2 |
ON Semiconductor |
86 |
NTMS10P02 |
HDTMOS3e Single SO-8 |
ON Semiconductor |
87 |
NTMS10P02R2 |
HDTMOS3e Single SO-8 |
ON Semiconductor |
88 |
NTMS10P02R2-D |
HDTMOS3e Single SO-8 P-Channel Enhancement-Mode Power MOSFET |
ON Semiconductor |
89 |
NTMS3P03R2 |
Power MOSFET -3.05 Amps, -30 Volts |
ON Semiconductor |
90 |
NTMS3P03R2-D |
Power MOSFET -3.05 Amps, -30 Volts P-Channel SO-8 |
ON Semiconductor |
| | | |