No. |
Part Name |
Description |
Manufacturer |
61 |
ASM3P2872AF-08ST |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
62 |
ASM3P2872AF-08TR |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
63 |
ASM3P2872AF-08TT |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
64 |
ASM3P2879AF-06OR |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
65 |
ASM3P2879AF-08SR |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
66 |
ASM3P2879AF-08ST |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
67 |
ASM3P2879AF-08TR |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
68 |
ASM3P2879AF-08TT |
3.3 V, 15 MHz to 30 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
69 |
ATR0797 |
65 to 300 MHz SiGe IF receiver/demodulator |
Atmel |
70 |
BAY96 |
Silicon planar diode for use in high efficiency multiplier circuits, input powers up to 30W |
Mullard |
71 |
BD9015KV-M |
3.9 to 30V, 2ch Synchronous Rectification Step-Down Controller |
ROHM |
72 |
BD9015KV-ME2 |
3.9 to 30V, 2ch Synchronous Rectification Step-Down Controller |
ROHM |
73 |
BD9016KV-M |
3.9 to 30V, 2ch Synchronous Rectification Step-Down Controller |
ROHM |
74 |
BD9016KV-ME2 |
3.9 to 30V, 2ch Synchronous Rectification Step-Down Controller |
ROHM |
75 |
BF |
Precision Rotative Transducers, Conductive Plastic, Bushing Mounting, Size 08 to 30, Good Repeatability, Long Life, Essentially Infinite Resolution, Up to 6 Electrical Functions on the Same Shaft |
Vishay |
76 |
BF543 |
Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications) |
Siemens |
77 |
BF550 |
PNP Silicon RF Transistor (For common emitter amplifier stages up to 300 MHz For mixer applications in AM/FM radios and VHF TV tuners) |
Siemens |
78 |
BF554 |
NPN Silicon RF Transistor (For general small-signal RF applications up to 300 MHz in amplifier, mixer and oscillator circuits) |
Siemens |
79 |
BF987 |
SILICON N CHANNEL MOSFET TRIODE (For high-frequency stages up to 300 MHz, preferably in FM applications High overload capability) |
Siemens |
80 |
BF999 |
Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications) |
Siemens |
81 |
BFP183 |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA |
Infineon |
82 |
BFP183 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) |
Siemens |
83 |
BFP183W |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA |
Infineon |
84 |
BFP183W |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA) |
Siemens |
85 |
BFP93 |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
Siemens |
86 |
BFP93A |
NPN Silicon RF Transistor (For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA) |
Siemens |
87 |
BFQ72 |
NPN Silicon RF Transistor (For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA.) |
Siemens |
88 |
BFQ75 |
PNP Silicon RF Transistor (For broadband amplifiers up to 2 GHz at collector currents from 5 mA to 30 mA.) |
Siemens |
89 |
BFR183 |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA) |
Siemens |
90 |
BFR183W |
NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA) |
Siemens |
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