| No. |
Part Name |
Description |
Manufacturer |
| 61 |
ESM133 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5296 |
SESCOSEM |
| 62 |
ESM134 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5298 |
SESCOSEM |
| 63 |
ESM136 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary ESM135 |
SESCOSEM |
| 64 |
ESM138 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary ESM137 |
SESCOSEM |
| 65 |
ESM140 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary ESM139 |
SESCOSEM |
| 66 |
ESM141 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N6099 |
SESCOSEM |
| 67 |
ESM142 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N6101 |
SESCOSEM |
| 68 |
KTC2120 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS) |
Korea Electronics (KEC) |
| 69 |
KTC2235 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS) |
Korea Electronics (KEC) |
| 70 |
KTC2383 |
SILICON NPN TRANSISTOR EPITAXIAL PLANAR TYPE (PCT PROCESS) |
Korea Electronics (KEC) |
| 71 |
MV1812A |
Silicon high-frequency step-recovery power varactor epitaxial-passivated device |
Motorola |
| 72 |
MV1812B |
Silicon high-frequency step-recovery power varactor epitaxial-passivated device |
Motorola |
| | | |
