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Datasheets for TTER

Datasheets found :: 19424
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No. Part Name Description Manufacturer
61 1920AB35 35 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
62 1920AB4 4 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
63 1920AB60 60 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
64 1920CD35 35 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
65 1920CD60 60 W, 25 V, 1930-1990 MHz common emitter transistor GHz Technology
66 1A229 High-Performance LED(Battery-Operated Equipment) Mitel Semiconductor
67 1N38AH Germanium Point Contact for Limitter Circuit, Small Capacitive Rectifier Hitachi Semiconductor
68 23A003 0.3 W, 15 V, 2300 MHz common emitter transistor GHz Technology
69 23A005 0.5 W, 20 V, 2300 MHz common emitter transistor GHz Technology
70 23A008 0.5 W, 20 V, 2300 MHz common emitter transistor GHz Technology
71 23A017 1.7 W, 20 V, 2300 MHz common emitter transistor GHz Technology
72 23A025 2.5 W, 20 V, 2300 MHz common emitter transistor GHz Technology
73 28222-13 ATM Transmitter/Receiver with UTOPIA Interface Conexant
74 28222-14 ATM Transmitter/Receiver with UTOPIA Interface Conexant
75 28233-11 ATM Transmitter/Receiver with UTOPIA Interface Conexant
76 28L202A1A Dual universal asynchronous receiver/transmitter (DUART). Philips
77 28L202A1B Dual universal asynchronous receiver/transmitter (DUART). Philips
78 2CR-5 Lithium Batteries (For Europe) - Cylindrical type CR series / Standard type Panasonic
79 2FWJ42M SCHOTTKY BARRIER RECTIFIER SWITCHING MODE POWER SUPPLY APPLICATION PORTABLE EQUIPMENT BATTERY APPLICATION TOSHIBA
80 2N1073 PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 40V Motorola
81 2N1073A PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 80V Motorola
82 2N1073B PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 120V Motorola
83 2N2728 PNP germanium high-current power transistor especially designed for solar cells, thermo-electric generators, sea cells, fuel cells, and 1.5-volt batteries Motorola
84 2N3375 Silicon NPN RF Power Transistor, overlay emitter electrode construction RCA Solid State
85 2N3553 Silicon NPN RF Power Transistor, overlay emitter electrode construction RCA Solid State
86 2N3632 Silicon NPN RF Power Transistor, overlay emitter electrode construction RCA Solid State
87 2N3866 40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note RCA Solid State
88 2N3903 General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
89 2N3904 General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. USHA India LTD
90 2N3905 General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. USHA India LTD


Datasheets found :: 19424
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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