No. |
Part Name |
Description |
Manufacturer |
61 |
1920AB35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
62 |
1920AB4 |
4 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
63 |
1920AB60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
64 |
1920CD35 |
35 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
65 |
1920CD60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
66 |
1A229 |
High-Performance LED(Battery-Operated Equipment) |
Mitel Semiconductor |
67 |
1N38AH |
Germanium Point Contact for Limitter Circuit, Small Capacitive Rectifier |
Hitachi Semiconductor |
68 |
23A003 |
0.3 W, 15 V, 2300 MHz common emitter transistor |
GHz Technology |
69 |
23A005 |
0.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
70 |
23A008 |
0.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
71 |
23A017 |
1.7 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
72 |
23A025 |
2.5 W, 20 V, 2300 MHz common emitter transistor |
GHz Technology |
73 |
28222-13 |
ATM Transmitter/Receiver with UTOPIA Interface |
Conexant |
74 |
28222-14 |
ATM Transmitter/Receiver with UTOPIA Interface |
Conexant |
75 |
28233-11 |
ATM Transmitter/Receiver with UTOPIA Interface |
Conexant |
76 |
28L202A1A |
Dual universal asynchronous receiver/transmitter (DUART). |
Philips |
77 |
28L202A1B |
Dual universal asynchronous receiver/transmitter (DUART). |
Philips |
78 |
2CR-5 |
Lithium Batteries (For Europe) - Cylindrical type CR series / Standard type |
Panasonic |
79 |
2FWJ42M |
SCHOTTKY BARRIER RECTIFIER SWITCHING MODE POWER SUPPLY APPLICATION PORTABLE EQUIPMENT BATTERY APPLICATION |
TOSHIBA |
80 |
2N1073 |
PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 40V |
Motorola |
81 |
2N1073A |
PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 80V |
Motorola |
82 |
2N1073B |
PNP germanium power transistor for high-voltage power switching applications, Collector-Emitter Max. Voltage 120V |
Motorola |
83 |
2N2728 |
PNP germanium high-current power transistor especially designed for solar cells, thermo-electric generators, sea cells, fuel cells, and 1.5-volt batteries |
Motorola |
84 |
2N3375 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
85 |
2N3553 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
86 |
2N3632 |
Silicon NPN RF Power Transistor, overlay emitter electrode construction |
RCA Solid State |
87 |
2N3866 |
40-Watt Peak-Envelope-Power Trasistor Amplifier for AM Transmitters in the Aircraft Band (118 to 136 MHz) - Application Note |
RCA Solid State |
88 |
2N3903 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
89 |
2N3904 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
90 |
2N3905 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
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