No. |
Part Name |
Description |
Manufacturer |
61 |
2N3375 |
Silicon Epitaxial Planar Overlay Transistor, collector connected to the case, intended for VHF/UHF transmitting |
Philips |
62 |
2N3553 |
Silicon NPN overlay epitaxial planar transistor for VHF/UHF transmitting applications |
ICCE |
63 |
2N3553 |
Transmitting transistor NPN |
mble |
64 |
2N3632 |
Silicon NPN overlay epitaxial planar transistor for VHF transmitting applications |
ICCE |
65 |
2N3632 |
Transmitting transistor NPN |
mble |
66 |
2N3632 |
Silicon Epitaxial Planar Overlay Transistor, intended for VHF transmitting |
Philips |
67 |
2N3866 |
Transmitting transistor NPN |
mble |
68 |
2N3924 |
Transmitting transistor NPN |
mble |
69 |
2N3926 |
Transmitting transistor NPN |
mble |
70 |
2N3927 |
Transmitting transistor NPN |
mble |
71 |
2N4427 |
Transmitting transistor NPN |
mble |
72 |
2N5071 |
Hotspotting in RF Power Transistors - Application Note |
RCA Solid State |
73 |
2N5910 |
PN gallium arsenide phosphide visible red light-emitting diode |
Motorola |
74 |
2N5911 |
Panel Mount Light Emitting Diode visible green PN gallium phosphide |
Motorola |
75 |
2N5912 |
Panel mount light emitting diode visible yellow PN gallium phosphide |
Motorola |
76 |
2N6105 |
Hotspotting in RF Power Transistors - Application Note |
RCA Solid State |
77 |
3256 |
High Density Programmable Logic |
Lattice Semiconductor |
78 |
3256A |
In-System Programmable High Density PLD |
Lattice Semiconductor |
79 |
3256E |
In-System Programmable High Density PLD |
Lattice Semiconductor |
80 |
4N25 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
81 |
4N26 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
82 |
4N27 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
83 |
4N28 |
GAAS INFRARED EMITTING DIODE |
QT Optoelectronics |
84 |
4N29 |
NPN Photo darlington transistor and PN infrared emitting diode (coupled pair) |
Motorola |
85 |
4N30 |
NPN Photo darlington transistor and PN infrared emitting diode (coupled pair) |
Motorola |
86 |
4N31 |
NPN Photo darlington transistor and PN infrared emitting diode (coupled pair) |
Motorola |
87 |
4N32 |
NPN Photo darlington transistor and PN infrared emitting diode (coupled pair) |
Motorola |
88 |
4N33 |
NPN Photo darlington transistor and PN infrared emitting diode (coupled pair) |
Motorola |
89 |
520E940C |
5.0mm INFRARED EMITTING DIODE |
etc |
90 |
5256VA |
In-System Programmable 3.3V SuperWIDE High Density PLD |
Lattice Semiconductor |
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