| No. |
Part Name |
Description |
Manufacturer |
| 61 |
STU16N65M2 |
N-channel 650 V, 0.32 Ohm typ., 11 A MDmesh M2 Power MOSFET in IPAK package |
ST Microelectronics |
| 62 |
STU16NB50 |
N-CHANNEL 500V - 0.28W - 15.6A-Max220 PowerMESH MOSFET |
SGS Thomson Microelectronics |
| 63 |
STU16NB50 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 64 |
STU16NC50 |
N-CHANNEL 500V 0.22 OHM 16A MAX220 POWERMESH II MOSFET |
SGS Thomson Microelectronics |
| 65 |
STU16NC50 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 66 |
STU1HN60K3 |
N-channel 600 V, 6.4 Ohm typ., 1.2 A, SuperMESH3(TM) Power MOSFET in IPAK package |
ST Microelectronics |
| 67 |
TCTU1A105M8R |
Chip Tantalum Capacitors (Bottom Surface Electrode Type) |
ROHM |
| 68 |
TCTU1A225M8R |
Chip Tantalum Capacitors (Bottom Surface Electrode Type) |
ROHM |
| 69 |
TCTU1A475M8R |
Chip Tantalum Capacitors (Bottom Surface Electrode Type) |
ROHM |
| 70 |
TCTU1C105M8R |
Chip Tantalum Capacitors (Bottom Surface Electrode Type) |
ROHM |
| 71 |
TCTU1C474M8R |
Chip Tantalum Capacitors (Bottom Surface Electrode Type) |
ROHM |
| 72 |
TCTU1D334M8R |
Chip Tantalum Capacitors (Bottom Surface Electrode Type) |
ROHM |
| 73 |
TU10/1 |
Germanium tunnel diodes |
Siemens |
| 74 |
TU10/2 |
Germanium tunnel diodes |
Siemens |
| 75 |
TU11/1 |
Germanium tunnel diodes |
Siemens |
| 76 |
TU11/2 |
Germanium tunnel diodes |
Siemens |
| 77 |
TU12/1 |
Germanium tunnel diodes |
Siemens |
| 78 |
TU12/2 |
Germanium tunnel diodes |
Siemens |
| 79 |
TU13/1 |
Germanium tunnel diodes |
Siemens |
| 80 |
TU13/2 |
Germanium tunnel diodes |
Siemens |
| 81 |
TU14/1 |
Germanium tunnel diodes |
Siemens |
| 82 |
TU14/2 |
Germanium tunnel diodes |
Siemens |
| 83 |
TU1B |
Germanium backward diode |
Siemens |
| | | |
