| No. |
Part Name |
Description |
Manufacturer |
| 61 |
KTY19-6Z |
Silicon Spreading Resistance Temperature Sensor in Robust Threaded Metal Housing |
Siemens |
| 62 |
KTY19CONNECTORSET |
Connector Set |
Infineon |
| 63 |
MTY100N10E |
TMOS POWER FET 100 AMPERES 100 VOLTS RDS(on) = 0.011 OHM |
Motorola |
| 64 |
MTY100N10E |
Power MOSFET 100 Amps, 100 Volts |
ON Semiconductor |
| 65 |
MTY100N10E-D |
Power MOSFET 100 Amps, 100 Volts |
ON Semiconductor |
| 66 |
MTY10N100E |
TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM |
Motorola |
| 67 |
MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM |
Motorola |
| 68 |
MTY14N100E |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM |
Motorola |
| 69 |
MTY14N100E |
N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 70 |
MTY14N100E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate |
ON Semiconductor |
| 71 |
MTY16N80E |
TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM |
Motorola |
| 72 |
MTY16N80E |
N-Channel Enhancement-Mode Silicon Gate |
ON Semiconductor |
| 73 |
MTY16N80E-D |
TMOS E-FET Power Field Effect Transistor |
ON Semiconductor |
| 74 |
NTY100N10 |
Power MOSFET 123 A, 100 V N-Channel Enhancement-Mode TO264 Package |
ON Semiconductor |
| 75 |
SMTY18AM |
LOW FORWARD VOLTAGE TVS: Transky |
ST Microelectronics |
| 76 |
STY100NM60N |
N-channel 600 V, 0.025 Ohm typ., 98 A, MDmesh(TM) II Power MOSFET in Max247 package |
ST Microelectronics |
| 77 |
STY100NS20FD |
N-CHANNEL 200V 0.022 OHM 100A ISOTOP MESH OVERLAY MOSFET |
SGS Thomson Microelectronics |
| 78 |
STY100NS20FD |
N-CHANNEL 200V 0.022 OHM 100A ISOTOP MESH OVERLAY MOSFET |
ST Microelectronics |
| 79 |
STY105NM50N |
N-channel 500 V, 0.018 Ohm typ., 110 A MDmesh(TM) II Power MOSFET in Max247 package |
ST Microelectronics |
| 80 |
STY112N65M5 |
N-channel 650 V, 0.019 Ohm, 96 A, MDmesh(TM) V Power MOSFET in Max247 |
ST Microelectronics |
| 81 |
STY130NF20D |
N-channel 200 V, 0.01 Ohm typ., 130 A, STripFET(TM) II with fast recovery diode Power MOSFET in Max247 package |
ST Microelectronics |
| 82 |
STY139N65M5 |
N-channel 650 V, 0.014 Ohm typ., 130 A, MDmesh(TM) V Power MOSFET in Max247 package |
ST Microelectronics |
| 83 |
STY140NS10 |
N-CHANNEL 100V - 0.009 OHM - 140A MAX247 MESH OVERLAY POWER MOSFET |
SGS Thomson Microelectronics |
| 84 |
STY140NS10 |
N-CHANNEL 100V - 0.009 OHM - 140A MAX247 MESH OVERLAY POWER MOSFET |
ST Microelectronics |
| 85 |
STY145N65M5 |
N-channel 650 V, 0.012 Ohm typ., 138 A, MDmesh(TM) V Power MOSFET in Max247 package |
ST Microelectronics |
| 86 |
STY15NA100 |
N - CHANNEL 1000V - 0.65 W - 15A - Max247, MOSFET |
SGS Thomson Microelectronics |
| 87 |
STY15NA100 |
N-CHANNEL 1000V - 0.65 OHM - 15A - MAX247 |
ST Microelectronics |
| 88 |
STY16NA90 |
N - CHANNEL 900V - 0.5 Ohm - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET |
SGS Thomson Microelectronics |
| 89 |
STY16NA90 |
N-CHANNEL 900 V - 0.5 OHM - 16 A - EXTREMELY LOW GATE CHARGE POWER MOSFET |
ST Microelectronics |
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