Datasheets for UNG

Datasheets found :: 11055

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No.	Part Name	Description	Manufacturer
61	2-OC1016	Germanium junction PNP transistor	TUNGSRAM
62	2-OC1072	Germanium junction PNP transistor	TUNGSRAM
63	2-OC1074	Germanium junction PNP transistor	TUNGSRAM
64	2-OC26	Germanium PNP power transistor	TUNGSRAM
65	20 DIP	20DIP Package Dimensions	Samsung Electronic
66	20 SOP	Package Dimensions	Samsung Electronic
67	20S207DA4	VACUUM FLUORESCENT DISPLAY MODULE	Samsung Electronic
68	21 ZSIP-SH	Package Dimensions	Samsung Electronic
69	22 DIP	22DIP Package Dimensions	Samsung Electronic
70	22 SDIP	22SDIP Package Dimensions	Samsung Electronic
71	22 SOP	22SOP Package Dimensions	Samsung Electronic
72	24 DIP	24DIP Package Dimensions	Samsung Electronic
73	24 SDIP	24SDIP Package Dimensions	Samsung Electronic
74	24 SKINNY DIP	Package Dimensions	Samsung Electronic
75	24 SOP	24SOP Package Dimensions	Samsung Electronic
76	24 SZIP	Package Dimensions	Samsung Electronic
77	256MBDDRSDRAM	DDRSDRAMSpecificationVersion0.3	Samsung Electronic
78	26P1	Tungsten point contact germanium diode - switching	SESCOSEM
79	28 DIP	28DIP Package Dimensions	Samsung Electronic
80	28 SDIP	Package Dimensions	Samsung Electronic
81	28 SOP	28SOP Package Dimensions	Samsung Electronic
82	2N3903	npn epitaxial silicon transistor	Samsung Electronic
83	2N3904	NPN Epitaxial Silicon Transistor	Samsung Electronic
84	2N3905	PNP EPITAXIAL SILICON TRANSISTOR	Samsung Electronic
85	2N3906	PNP Epitaxial Silicon Transistor	Samsung Electronic
86	2N4123	NPN EPITAXIAL SILICON TRANSISTOR	Samsung Electronic
87	2N4124	NPN EPITAXIAL SILICON TRANSISTOR	Samsung Electronic
88	2N4125	PNP EPITAXIAL SILICON TRANSISTOR	Samsung Electronic
89	2N4126	PNP EPITAXIAL SILICON TRANSISTOR	Samsung Electronic
90	2N4400	NPN Epitaxial Silicon Transistor	Samsung Electronic

Datasheets found :: 11055

Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |