| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1N5153 |
Silicon planar epitaxial varactor diode for use in multipliers up to S band |
Mullard |
| 62 |
1N5155 |
Silicon planar epitaxial varactor diode for use in multipliers up to C band |
Mullard |
| 63 |
1N5157 |
Silicon planar epitaxial varactor diode for use in multipliers C up to X band |
Mullard |
| 64 |
1N5829 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 20V. Vrsm = 24V. |
USHA India LTD |
| 65 |
1N5830 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 30V. Vrsm = 36V. |
USHA India LTD |
| 66 |
1N5831 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 40V. Vrsm = 48V. |
USHA India LTD |
| 67 |
1N5832 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 20V. Vrsm = 24V. |
USHA India LTD |
| 68 |
1N5833 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 30V. Vrsm = 36V. |
USHA India LTD |
| 69 |
1N5834 |
Switchmode power rectifier schottky diode. Ideally suited for use as rectifiers in low voltage. High frequency invertors. Free wheeling diodes and polarity protection diodes. Vrrm = 40V. Vrsm = 48V. |
USHA India LTD |
| 70 |
1S2074H |
Silicon Epitaxial Plana Diode, intended for use in High Speed Switching |
Hitachi Semiconductor |
| 71 |
1S2076 |
Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-35V, VR=-30V |
Hitachi Semiconductor |
| 72 |
1S2076A |
Silicon Epitaxial Planar Diode, intended for use in Various Detector, Modulator, Demodulator VR(peak)=-70V, VR=-60V |
Hitachi Semiconductor |
| 73 |
1S2090 |
Silicon Epitaxial Planar Diode, intended for use in UHF/VHF TV Tuner AFC |
Hitachi Semiconductor |
| 74 |
1S310 |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 75 |
1S310H |
Silicon Diffused Junction Diode, VR(peak)=-50V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 76 |
1S311 |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 77 |
1S311H |
Silicon Diffused Junction Diode, VR(peak)=-100V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 78 |
1S312 |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 79 |
1S312H |
Silicon Diffused Junction Diode, VR(peak)=-200V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 80 |
1S313 |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 81 |
1S313H |
Silicon Diffused Junction Diode, VR(peak)=-300V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 82 |
1S314 |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 83 |
1S314H |
Silicon Diffused Junction Diode, VR(peak)=-400V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 84 |
1S315 |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 85 |
1S315H |
Silicon Diffused Junction Diode, VR(peak)=-500V, intended for use as a Rectifier for Power Source |
Hitachi Semiconductor |
| 86 |
1S689 |
Germanium Alloyed Junction Diode, VR(peak) -200V, intended for use in TV Horizontal Deflection Dampar |
Hitachi Semiconductor |
| 87 |
1S689A |
Germanium Alloyed Junction Diode, VR(peak) -270V, intended for use in TV Horizontal Deflection Dampar |
Hitachi Semiconductor |
| 88 |
1S750 |
Silicon Point Contact Epitaxial, intended for use in UHF Tuner Mixer |
Hitachi Semiconductor |
| 89 |
1S752H |
Silicon Alloyed Junction, Zener Diode Vz=2.0...3.2 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
| 90 |
1S753H |
Silicon Alloyed Junction, Zener Diode Vz=3.0...3.9 , intended for use in Stabilized Power Source |
Hitachi Semiconductor |
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