No. |
Part Name |
Description |
Manufacturer |
61 |
1SMB3EZ160 |
160 V, 3 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
62 |
1SMB3EZ170 |
170 V, 3 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
63 |
1SMB3EZ180 |
180 V, 3 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
64 |
1SMB3EZ190 |
190 V, 3 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
65 |
1SMB3EZ200 |
200 V, 3 W, surface mount silicon zener diode |
TRANSYS Electronics Limited |
66 |
2PB1424 |
20 V, 3 A PNP low VCEsat (BISS) transistor |
Nexperia |
67 |
2PB1424 |
20 V, 3 A PNP low VCEsat (BISS) transistor |
NXP Semiconductors |
68 |
2PB1424 |
20 V, 3 A PNP low VCEsat (BISS) transistor |
Philips |
69 |
2PD2150 |
20 V, 3 A NPN low VCEsat (BISS) transistor |
Nexperia |
70 |
2PD2150 |
20 V, 3 A NPN low VCEsat (BISS) transistor |
NXP Semiconductors |
71 |
2PD2150 |
20 V, 3 A NPN low VCEsat (BISS) transistor |
Philips |
72 |
3001-2 |
1 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
73 |
3003 |
3 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
74 |
3003-2 |
3 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
75 |
3003-3 |
3 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
76 |
3005 |
5 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
77 |
3005-2 |
5 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
78 |
3005-3 |
5 W, 28 V, 3 GHz, microwave CW bipolar |
Acrian |
79 |
3EZ100 |
100 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
80 |
3EZ110 |
110 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
81 |
3EZ120 |
120 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
82 |
3EZ130 |
130 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
83 |
3EZ140 |
140 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
84 |
3EZ150 |
150 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
85 |
3EZ160 |
160 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
86 |
3EZ170 |
170 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
87 |
3EZ180 |
180 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
88 |
3EZ190 |
190 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
89 |
3EZ200 |
200 V, 3 W, glass passivated junction silicon zener diode |
TRANSYS Electronics Limited |
90 |
A2181A-08SR |
3.3 V, 3 MHz to 78 MHz, general purpose EMI reduction IC |
Alliance Semiconductor |
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