| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2N3702 |
0.625W General Purpose PNP Plastic Leaded Transistor. 25V Vceo, 0.600A Ic, 60 - 300 hFE |
Continental Device India Limited |
| 62 |
2N3704 |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.600A Ic, 100 - 300 hFE |
Continental Device India Limited |
| 63 |
2N3705 |
0.625W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.600A Ic, 50 - 150 hFE |
Continental Device India Limited |
| 64 |
2N3707 |
0.360W General Purpose NPN Plastic Leaded Transistor. 30V Vceo, 0.200A Ic, 100 - 400 hFE |
Continental Device India Limited |
| 65 |
2N3724 |
1.000W Switching NPN Metal Can Transistor. 30V Vceo, 1.000A Ic, 60 - 150 hFE. |
Continental Device India Limited |
| 66 |
2N3725 |
1.000W Switching NPN Metal Can Transistor. 50V Vceo, 1.000A Ic, 60 - 150 hFE. |
Continental Device India Limited |
| 67 |
2N3772 |
150.000W Power NPN Metal Can Transistor. 60V Vceo, 20.000A Ic, 15 - 60 hFE. |
Continental Device India Limited |
| 68 |
2N3773 |
150.000W Power NPN Metal Can Transistor. 140V Vceo, 16.000A Ic, 5 hFE. |
Continental Device India Limited |
| 69 |
2N3773 |
High power NPN transistor. High power audio and linear applications. Vceo = 140Vdc, Vcer = 150Vdc, Vcb = 160Vdc, Veb = 7Vdc, Ic = 16Adc, Ib = 4Adc, PD = 150W. |
USHA India LTD |
| 70 |
2N3773 |
High power NPN transistor. High power audio and linear applications. Vceo = 140Vdc, Vcer = 150Vdc, Vcb = 160Vdc, Veb = 7Vdc, Ic = 16Adc, Ib = 4Adc, PD = 150W. |
USHA India LTD |
| 71 |
2N3867 |
1.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 3.000A Ic, 40 - 200 hFE. |
Continental Device India Limited |
| 72 |
2N3903 |
0.625W General Purpose NPN Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 20 - hFE |
Continental Device India Limited |
| 73 |
2N3903 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 74 |
2N3904 |
0.625W General Purpose NPN Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 40 - hFE |
Continental Device India Limited |
| 75 |
2N3904 |
Vce=1.0V transistor |
MCC |
| 76 |
2N3904 |
General purpose transistor. Collector-emitter voltage: Vceo = 40V. Collector-base voltage: Vcbo = 60V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
| 77 |
2N3904-T18 |
40V Vce, 0.2A Ic, 300MHz NPN bipolar transistor |
SemeLAB |
| 78 |
2N3905 |
0.625W General Purpose PNP Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 30 - hFE |
Continental Device India Limited |
| 79 |
2N3905 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 80 |
2N3906 |
0.625W General Purpose PNP Plastic Leaded Transistor. 40V Vceo, 0.200A Ic, 60 - hFE |
Continental Device India Limited |
| 81 |
2N3906 |
Vce=1.0V transistor |
MCC |
| 82 |
2N3906 |
General purpose transistor. Collector-emitter voltage: Vceo = -40V. Collector-base voltage: Vcbo = -40V. Collector dissipation: Pc(max) = -625mW. |
USHA India LTD |
| 83 |
2N4030 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 84 |
2N4031 |
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 85 |
2N4032 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
| 86 |
2N4033 |
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
| 87 |
2N4036 |
1.000W General Purpose PNP Metal Can Transistor. 65V Vceo, 1.000A Ic, 20 hFE. |
Continental Device India Limited |
| 88 |
2N4037 |
1.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 1.000A Ic, 50 - 250 hFE. |
Continental Device India Limited |
| 89 |
2N4123 |
Ic=200mA, Vce=1.0V transistor |
MCC |
| 90 |
2N4123 |
General purpose transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 40V. Collector dissipation: Pc(max) = 625mW. |
USHA India LTD |
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