No. |
Part Name |
Description |
Manufacturer |
61 |
HVD369B |
Diodes>Variable Capacitance |
Renesas |
62 |
HVD372B |
Variable Capacitance Diode |
Hitachi Semiconductor |
63 |
HVD372B |
Diodes>Variable Capacitance |
Renesas |
64 |
HVD374B |
Diodes>Variable Capacitance |
Renesas |
65 |
HVD380B |
Variable Capacitance Diode |
Hitachi Semiconductor |
66 |
HVD380B |
Diodes>Variable Capacitance |
Renesas |
67 |
HVD381B |
Variable Capacitance Diode |
Hitachi Semiconductor |
68 |
HVD381B |
Diodes>Variable Capacitance |
Renesas |
69 |
HVD385B |
Variable Capacitance Diode |
Hitachi Semiconductor |
70 |
HVD385B |
Diodes>Variable Capacitance |
Renesas |
71 |
HVD388C |
Diodes>Variable Capacitance |
Renesas |
72 |
HVD396C |
Diodes>Variable Capacitance |
Renesas |
73 |
HVD397C |
Diodes>Variable Capacitance |
Renesas |
74 |
HVD399C |
Diodes>Variable Capacitance |
Renesas |
75 |
MAX6441KAKQVD3 |
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
MAXIM - Dallas Semiconductor |
76 |
MAX6715UTRVD3-T |
Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
77 |
MAX6715UTSVD3-T |
Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
78 |
MAX6715UTYVD3-T |
Vcc1: 2.188 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
79 |
MAX6716UTRVD3-T |
Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
80 |
MAX6716UTSVD3-T |
Vcc1: 2.925 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
81 |
MAX6716UTYVD3-T |
Vcc1: 2.188 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
82 |
MAX6717AUKRVD3+ |
Dual/Triple, Ultra-Low-Voltage, SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
83 |
MAX6717AUKRVD3+T |
Dual/Triple, Ultra-Low-Voltage, SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
84 |
MAX6717AUKSVD3+ |
Dual/Triple, Ultra-Low-Voltage, SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
85 |
MAX6717AUKSVD3+T |
Dual/Triple, Ultra-Low-Voltage, SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
86 |
MAX6717UKRVD3+ |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
87 |
MAX6717UKRVD3+T |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
88 |
MAX6717UKRVD3-T |
Vcc1: 2.625 V, Vcc2: 1.575 V, active timeout period: 140 ms-280 ms, dual/triple ultra-low-voltage SOT23 mP supervisor circuit |
MAXIM - Dallas Semiconductor |
89 |
MAX6717UKSVD3+ |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
90 |
MAX6717UKSVD3+T |
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits |
MAXIM - Dallas Semiconductor |
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