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Datasheets for W R

Datasheets found :: 2254
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |
No. Part Name Description Manufacturer
61 1N5539B LOW REVERSE LEAKAGE CHARACTERISTICS Compensated Devices Incorporated
62 1N5539B-1 LOW REVERSE LEAKAGE CHARACTERISTICS Compensated Devices Incorporated
63 1N5540B LOW REVERSE LEAKAGE CHARACTERISTICS Compensated Devices Incorporated
64 1N5540B-1 LOW REVERSE LEAKAGE CHARACTERISTICS Compensated Devices Incorporated
65 1N5541B LOW REVERSE LEAKAGE CHARACTERISTICS Compensated Devices Incorporated
66 1N5541B-1 LOW REVERSE LEAKAGE CHARACTERISTICS Compensated Devices Incorporated
67 1N5542B LOW REVERSE LEAKAGE CHARACTERISTICS Compensated Devices Incorporated
68 1N5542B-1 LOW REVERSE LEAKAGE CHARACTERISTICS Compensated Devices Incorporated
69 1N5543B LOW REVERSE LEAKAGE CHARACTERISTICS Compensated Devices Incorporated
70 1N5543B-1 LOW REVERSE LEAKAGE CHARACTERISTICS Compensated Devices Incorporated
71 1N5544B LOW REVERSE LEAKAGE CHARACTERISTICS Compensated Devices Incorporated
72 1N5544B-1 LOW REVERSE LEAKAGE CHARACTERISTICS Compensated Devices Incorporated
73 1N5545B LOW REVERSE LEAKAGE CHARACTERISTICS Compensated Devices Incorporated
74 1N5545B-1 LOW REVERSE LEAKAGE CHARACTERISTICS Compensated Devices Incorporated
75 1N5546B LOW REVERSE LEAKAGE CHARACTERISTICS Compensated Devices Incorporated
76 1N5546B-1 LOW REVERSE LEAKAGE CHARACTERISTICS Compensated Devices Incorporated
77 2-AA116 HF germanium diode pair for low resistance radio detector and discriminator circuits TUNGSRAM
78 2N2102 1.000W RF NPN Metal Can Transistor. 65V Vceo, 1.000A Ic, 40 - 120 hFE. Continental Device India Limited
79 2N3498 1.000W RF NPN Metal Can Transistor. 100V Vceo, 0.500A Ic, 20 hFE. Continental Device India Limited
80 2N3499 1.000W RF NPN Metal Can Transistor. 100V Vceo, 0.500A Ic, 35 hFE. Continental Device India Limited
81 2N3500 1.000W RF NPN Metal Can Transistor. 150V Vceo, 0.300A Ic, 20 hFE. Continental Device India Limited
82 2N3501 1.000W RF NPN Metal Can Transistor. 150V Vceo, 0.300A Ic, 35 hFE. Continental Device India Limited
83 2N3635 1.000W RF PNP Metal Can Transistor. 140V Vceo, 1.000A Ic, 80 hFE. Continental Device India Limited
84 2N3636 1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 40 hFE. Continental Device India Limited
85 2N3637 1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 80 hFE. Continental Device India Limited
86 2N4030 0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 - 120 hFE. Continental Device India Limited
87 2N4031 0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 - 120 hFE. Continental Device India Limited
88 2N4032 0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE. Continental Device India Limited
89 2N4033 0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. Continental Device India Limited
90 2N6084 12.5V 40W RF NPN transistor for VHF FM mobile applications SGS Thomson Microelectronics


Datasheets found :: 2254
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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