| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1N5545B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 62 |
1N5546B |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 63 |
1N5546B-1 |
LOW REVERSE LEAKAGE CHARACTERISTICS |
Compensated Devices Incorporated |
| 64 |
2-AA116 |
HF germanium diode pair for low resistance radio detector and discriminator circuits |
TUNGSRAM |
| 65 |
2N2102 |
1.000W RF NPN Metal Can Transistor. 65V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 66 |
2N3498 |
1.000W RF NPN Metal Can Transistor. 100V Vceo, 0.500A Ic, 20 hFE. |
Continental Device India Limited |
| 67 |
2N3499 |
1.000W RF NPN Metal Can Transistor. 100V Vceo, 0.500A Ic, 35 hFE. |
Continental Device India Limited |
| 68 |
2N3500 |
1.000W RF NPN Metal Can Transistor. 150V Vceo, 0.300A Ic, 20 hFE. |
Continental Device India Limited |
| 69 |
2N3501 |
1.000W RF NPN Metal Can Transistor. 150V Vceo, 0.300A Ic, 35 hFE. |
Continental Device India Limited |
| 70 |
2N3635 |
1.000W RF PNP Metal Can Transistor. 140V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
| 71 |
2N3636 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
| 72 |
2N3637 |
1.000W RF PNP Metal Can Transistor. 175V Vceo, 1.000A Ic, 80 hFE. |
Continental Device India Limited |
| 73 |
2N4030 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 74 |
2N4031 |
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 - 120 hFE. |
Continental Device India Limited |
| 75 |
2N4032 |
0.800W RF PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
| 76 |
2N4033 |
0.800W RF PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 100 - 300 hFE. |
Continental Device India Limited |
| 77 |
2N917 |
0.200W RF NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 20 - 200 hFE. |
Continental Device India Limited |
| 78 |
2N918 |
0.200W RF NPN Metal Can Transistor. 15V Vceo, 0.050A Ic, 20 hFE. |
Continental Device India Limited |
| 79 |
2SA15 |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier, Frequency Converter |
Hitachi Semiconductor |
| 80 |
2SA15H |
Germanium PNP Alloyed Junction Transistor, intended for use in MW RF Amplifier |
Hitachi Semiconductor |
| 81 |
2SA350 |
Germanium PNP Transistor Drift Junction, intended for use in SW RF Amplifier, Oscillator, FM IF Amplifier |
Hitachi Semiconductor |
| 82 |
2SA355 |
Germanium PNP Transistor Drift Junction, intended for use in MW RF Amplifier |
Hitachi Semiconductor |
| 83 |
5962-8752301PA |
RS-423 Dual Programmable Slew Rate Line Driver |
National Semiconductor |
| 84 |
5962-9099401MPA |
Wideband, High-Slew Rate, Monolithic Op Amp |
National Semiconductor |
| 85 |
5962-9687601MPA |
Ultra-High Slew Rate, Closed-Loop Buffer |
National Semiconductor |
| 86 |
5962-9858801Q2A |
Dual 2.7-V High Slew Rate Rail-To-Rail Output Operational Amplifier |
Texas Instruments |
| 87 |
5962-9858801Q2A |
Dual 2.7-V High Slew Rate Rail-To-Rail Output Operational Amplifier |
Texas Instruments |
| 88 |
5962-9858801QHA |
Dual 2.7-V High Slew Rate Rail-To-Rail Output Operational Amplifier |
Texas Instruments |
| 89 |
5962-9858801QHA |
Dual 2.7-V High Slew Rate Rail-To-Rail Output Operational Amplifier |
Texas Instruments |
| 90 |
5962-9858801QPA |
Dual 2.7-V High Slew Rate Rail-To-Rail Output Operational Amplifier |
Texas Instruments |
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