No. |
Part Name |
Description |
Manufacturer |
61 |
APPLICATION-NOTE |
Match impedances in microwave amplifiers |
TRW |
62 |
BFQ22S |
Silicon Planar Epitaxial NPN transistor, intended for use in UHF and microwave aerial amplifiers, radar systems, oscilloscopes, spectrum analyses, etc. |
Philips |
63 |
BFQ23 |
Silicon wideband PNP transistor, intended for use in UHF and microwave amplifiers, low intermodulation distorsion and high power gain |
Philips |
64 |
BFQ51C |
Gold-metallized PNP silicon transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFP90A |
Philips |
65 |
BFQ52 |
PNP silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers, NPN complement is BFQ53 |
Philips |
66 |
BFQ53 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers, PNP complement is BFQ52 |
Philips |
67 |
BFQ63 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers |
Philips |
68 |
BFR91 |
NPN silicon planar epitaxial transistor, intended for use in UHF and microwave amplifiers such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. |
Philips |
69 |
BFR91A |
NPN silicon planar epitaxial transistor for use in UHF and microwave amplifiers, low noise, high power gain, gold metallization |
Philips |
70 |
BFR96 |
NPN silicon planar epitaxial transistor intended for use in UHF and microwave amplifiers |
Philips |
71 |
BXY44K |
Silicon PIN Diode (Microwave attenuator diode Linear RF characteristic) |
Siemens |
72 |
HA22032T |
GaAs MMIC Down Converter for Micro Wave Application |
Hitachi Semiconductor |
73 |
HA22033 |
GaAs MMIC Low Noise Amplifier for Micro Wave Application |
Hitachi Semiconductor |
74 |
HA22039 |
GaAs IC Low Distortion Mixer for Micro Wave Application |
Hitachi Semiconductor |
75 |
HA22040 |
GaAs MMIC Down Converter for Micro Wave Application |
Hitachi Semiconductor |
76 |
HMMC-5021 |
2-26.5 GHz GaAs MMIC Traveling Wave Amplifier |
Agilent (Hewlett-Packard) |
77 |
HMMC-5021DC |
2-22GHz GaAs MMIC traveling wave amplifier |
Agilent (Hewlett-Packard) |
78 |
HMMC-5021RF |
2-22GHz GaAs MMIC traveling wave amplifier |
Agilent (Hewlett-Packard) |
79 |
HMMC-5022 |
2-26.5 GHz GaAs MMIC Traveling Wave Amplifier |
Agilent (Hewlett-Packard) |
80 |
HMMC-5022DC |
2-22GHz GaAs MMIC traveling wave amplifier |
Agilent (Hewlett-Packard) |
81 |
HMMC-5022RF |
2-22GHz GaAs MMIC traveling wave amplifier |
Agilent (Hewlett-Packard) |
82 |
HMMC-5026 |
2-26.5 GHz GaAs MMIC Traveling Wave Amplifier |
Agilent (Hewlett-Packard) |
83 |
HMMC-5026DC |
2-26.5GHz GaAs MMIC traveling wave amplifier |
Agilent (Hewlett-Packard) |
84 |
HMMC-5026RF |
2-26.5GHz GaAs MMIC traveling wave amplifier |
Agilent (Hewlett-Packard) |
85 |
Q62702-X148 |
Silicon PIN Diode (Microwave attenuator diode Linear RF characteristic) |
Siemens |
86 |
RCA-2N5470 |
Microwave Amplifiers and Oscillators Using the RCA-2N5470 Power Transistor - Application Note |
RCA Solid State |
87 |
RCA3001 |
Microwave Amplifiers and Oscillators using RCA3000-Series Transistors - Application Note |
RCA Solid State |
88 |
RCA3003 |
Microwave Amplifiers and Oscillators using RCA3000-Series Transistors - Application Note |
RCA Solid State |
89 |
RCA3005 |
Microwave Amplifiers and Oscillators using RCA3000-Series Transistors - Application Note |
RCA Solid State |
90 |
SD1862 |
2.2-2.3GHz 10W 24V NPN silicon transistor designed for microwave applications |
SGS Thomson Microelectronics |
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