| No. |
Part Name |
Description |
Manufacturer |
| 61 |
4X16E83VTW-6 |
4 MEG x 16 EDO DRAM |
etc |
| 62 |
50S116T |
512K x 2 Banks x 16 BITS SDRAM |
Ceramate |
| 63 |
50S116T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
| 64 |
50S116T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
| 65 |
50S116T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
| 66 |
54S416T |
1M x 4 Banks x 16 BITS SDRAM |
Ceramate |
| 67 |
54S416T-5 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 200MHz. Self refresh current (max) 1mA |
Ceramate |
| 68 |
54S416T-6 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 166MHz. Self refresh current (max) 1mA |
Ceramate |
| 69 |
54S416T-7 |
High-speed synchronous dynamic random access memory (SDRAM), organized as 1M words x 4 banks x 16 bits. Speed (CL = 3) 143MHz. Self refresh current (max) 1mA |
Ceramate |
| 70 |
5962R-TBD01QTBDA |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 71 |
5962R-TBD01QTBDC |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 72 |
5962R-TBD01QTBDX |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class Q. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 73 |
5962R-TBD01VTBDA |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish hot solder dipped. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 74 |
5962R-TBD01VTBDC |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish gold. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 75 |
5962R-TBD01VTBDX |
256K x 16 SRAM: SMD. 15ns access time, CMOS I/O. Class V. Lead finish factory option. Total dose 100K rad(Si). |
Aeroflex Circuit Technology |
| 76 |
61C3216 |
32K x 16 HIGH-SPEED CMOS STATIC RAM |
Integrated Silicon Solution Inc |
| 77 |
61LV25616AL |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY |
Integrated Silicon Solution Inc |
| 78 |
61LV51216 |
512K x 16 HIGH SPEED ASYNCHRONOUS |
Integrated Silicon Solution Inc |
| 79 |
62LV12816 |
128K x 16 CMOS STATIC RAM |
Integrated Silicon Solution Inc |
| 80 |
62WV12816EC |
Very Low Power/Voltage CMOS SRAM 128k X 16 bit |
etc |
| 81 |
62WV12816EI |
Very Low Power/Voltage CMOS SRAM 128k X 16 bit |
etc |
| 82 |
7025ERPQB35 |
(8K x 16-bit) dual port RAM high-speed CMOS |
Maxwell Technologies |
| 83 |
7025ERPQB45 |
(8K x 16-bit) dual port RAM high-speed CMOS |
Maxwell Technologies |
| 84 |
7025ERPQE35 |
(8K x 16-bit) dual port RAM high-speed CMOS |
Maxwell Technologies |
| 85 |
7025ERPQE45 |
(8K x 16-bit) dual port RAM high-speed CMOS |
Maxwell Technologies |
| 86 |
7025ERPQI35 |
(8K x 16-bit) dual port RAM high-speed CMOS |
Maxwell Technologies |
| 87 |
7025ERPQI45 |
(8K x 16-bit) dual port RAM high-speed CMOS |
Maxwell Technologies |
| 88 |
7025ERPQS35 |
(8K x 16-bit) dual port RAM high-speed CMOS |
Maxwell Technologies |
| 89 |
7025ERPQS45 |
(8K x 16-bit) dual port RAM high-speed CMOS |
Maxwell Technologies |
| 90 |
71V016SA |
3.3V CMOS Static RAM 1 Meg (64K x 16-Bit) |
IDT |
| | | |
