No. |
Part Name |
Description |
Manufacturer |
61 |
HY51VS18163HGLJ-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power |
Hynix Semiconductor |
62 |
HY51VS18163HGLT-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power |
Hynix Semiconductor |
63 |
HY51VS18163HGLT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power |
Hynix Semiconductor |
64 |
HY51VS18163HGLT-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power |
Hynix Semiconductor |
65 |
HY51VS18163HGT-5 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns |
Hynix Semiconductor |
66 |
HY51VS18163HGT-6 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns |
Hynix Semiconductor |
67 |
HY51VS18163HGT-7 |
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns |
Hynix Semiconductor |
68 |
HY51VS65163HG |
4M x 16Bit EDO DRAM |
Hynix Semiconductor |
69 |
HY51VS65163HGJ-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns |
Hynix Semiconductor |
70 |
HY51VS65163HGJ-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns |
Hynix Semiconductor |
71 |
HY51VS65163HGJ-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns |
Hynix Semiconductor |
72 |
HY51VS65163HGLJ-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power |
Hynix Semiconductor |
73 |
HY51VS65163HGLJ-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power |
Hynix Semiconductor |
74 |
HY51VS65163HGLJ-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power |
Hynix Semiconductor |
75 |
HY51VS65163HGLT-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power |
Hynix Semiconductor |
76 |
HY51VS65163HGLT-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power |
Hynix Semiconductor |
77 |
HY51VS65163HGLT-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power |
Hynix Semiconductor |
78 |
HY51VS65163HGT-45 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 45ns |
Hynix Semiconductor |
79 |
HY51VS65163HGT-5 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 50ns |
Hynix Semiconductor |
80 |
HY51VS65163HGT-6 |
4M x 16Bit EDO DRAM, 3.3V, LVTTL-interface, 60ns |
Hynix Semiconductor |
81 |
HY57V281620A |
4 Banks x 2M x 16bits Synchronous DRAM |
Hynix Semiconductor |
82 |
HY57V281620ALT-6 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz |
Hynix Semiconductor |
83 |
HY57V281620ALT-7 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 143MHz |
Hynix Semiconductor |
84 |
HY57V281620ALT-8 |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 125MHz |
Hynix Semiconductor |
85 |
HY57V281620ALT-H |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 133MHz |
Hynix Semiconductor |
86 |
HY57V281620ALT-HI |
4 Banks x 2M x 16bits Synchronous DRAM |
Hynix Semiconductor |
87 |
HY57V281620ALT-K |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 133MHz |
Hynix Semiconductor |
88 |
HY57V281620ALT-KI |
4 Banks x 2M x 16bits Synchronous DRAM |
Hynix Semiconductor |
89 |
HY57V281620ALT-P |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 100MHz |
Hynix Semiconductor |
90 |
HY57V281620ALT-PI |
4 Banks x 2M x 16bits Synchronous DRAM |
Hynix Semiconductor |
| | | |