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Datasheets for Y 2

Datasheets found :: 1436
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No. Part Name Description Manufacturer
61 1N5829 Diode Schottky 20V 25A 2-Pin DO-4 New Jersey Semiconductor
62 1N5832 Diode Schottky 20V 40A 2-Pin DO-5 New Jersey Semiconductor
63 1N5832A Diode Schottky 20V 40A 2-Pin DO-5 New Jersey Semiconductor
64 1N68B Diode Schottky 20V 0.075A 2-Pin DO-35 New Jersey Semiconductor
65 1N81H Diode Schottky 20V 1A 2-Pin DO-41 New Jersey Semiconductor
66 2020-200 Delay 200 +/-10 ns, fixed SIP delay line Tr Data Delay Devices Inc
67 2020-250 Delay 250 +/-10 ns, fixed SIP delay line Tr Data Delay Devices Inc
68 2021-200 Delay 200 +/-10 ns, fixed SIP delay line Tr Data Delay Devices Inc
69 2021-250 Delay 250 +/-10 ns, fixed SIP delay line Tr Data Delay Devices Inc
70 2075-2000 Delay 2000 +/-40 ns, fixed high B.W. line Tr Data Delay Devices Inc
71 28F004B5 SMART 5 BOOT BLOCK, FLASH MEMORY FAMILY 2, 4, 8 MBIT Intel
72 28F200B5 SMART 5 BOOT BLOCK, FLASH MEMORY FAMILY 2, 4, 8 MBIT Intel
73 28F200B5 SMART 5 BOOT BLOCK, FLASH MEMORY FAMILY 2, 4, 8 MBIT Intel
74 28F400B5 SMART 5 BOOT BLOCK, FLASH MEMORY FAMILY 2, 4, 8 MBIT Intel
75 28F400B5 SMART 5 BOOT BLOCK, FLASH MEMORY FAMILY 2, 4, 8 MBIT Intel
76 28F800B5 SMART 5 BOOT BLOCK, FLASH MEMORY FAMILY 2, 4, 8 MBIT Intel
77 28F800B5 SMART 5 BOOT BLOCK, FLASH MEMORY FAMILY 2, 4, 8 MBIT Intel
78 29C040 4-Megabit 512K x 8 5-volt Only 256-Byte Sector CMOS Flash Memory Atmel
79 2N5492 NPN Power Transistor Homobase - LF amplifier and switching, complementary 2N6109 SESCOSEM
80 2N5494 NPN Power Transistor Homobase - LF amplifier and switching, complementary 2N6111 SESCOSEM
81 2N5496 NPN Power Transistor Homobase - LF amplifier and switching, complementary 2N6107 SESCOSEM
82 2N6107 PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5496 SESCOSEM
83 2N6109 PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5492 SESCOSEM
84 2N6111 PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5494 SESCOSEM
85 2N6288 40.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 7.000A Ic, 30 - 150 hFE. Complementary 2N6111 Continental Device India Limited
86 2N6290 40.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 7.000A Ic, 2 hFE. Complementary 2N6109 Continental Device India Limited
87 2SA1225 Silicon PNP epitaxial power transistor, complementary 2SC2983 TOSHIBA
88 2SA1284 900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244 Isahaya Electronics Corporation
89 2SA1302 Silicon PNP triple diffused power transistor, complementary 2SC3281 TOSHIBA
90 2SA1363 500mW SMD PNP transistor, maximum rating: -16V Vceo, -2A Ic, 150 to 800 hFE. Complementary 2SC3443 Isahaya Electronics Corporation


Datasheets found :: 1436
Page: | 1 | 2 | 3 | 4 | 5 | 6 | 7 |



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