| No. |
Part Name |
Description |
Manufacturer |
| 61 |
1N5829 |
Diode Schottky 20V 25A 2-Pin DO-4 |
New Jersey Semiconductor |
| 62 |
1N5832 |
Diode Schottky 20V 40A 2-Pin DO-5 |
New Jersey Semiconductor |
| 63 |
1N5832A |
Diode Schottky 20V 40A 2-Pin DO-5 |
New Jersey Semiconductor |
| 64 |
1N68B |
Diode Schottky 20V 0.075A 2-Pin DO-35 |
New Jersey Semiconductor |
| 65 |
1N81H |
Diode Schottky 20V 1A 2-Pin DO-41 |
New Jersey Semiconductor |
| 66 |
2020-200 |
Delay 200 +/-10 ns, fixed SIP delay line Tr |
Data Delay Devices Inc |
| 67 |
2020-250 |
Delay 250 +/-10 ns, fixed SIP delay line Tr |
Data Delay Devices Inc |
| 68 |
2021-200 |
Delay 200 +/-10 ns, fixed SIP delay line Tr |
Data Delay Devices Inc |
| 69 |
2021-250 |
Delay 250 +/-10 ns, fixed SIP delay line Tr |
Data Delay Devices Inc |
| 70 |
2075-2000 |
Delay 2000 +/-40 ns, fixed high B.W. line Tr |
Data Delay Devices Inc |
| 71 |
28F004B5 |
SMART 5 BOOT BLOCK, FLASH MEMORY FAMILY 2, 4, 8 MBIT |
Intel |
| 72 |
28F200B5 |
SMART 5 BOOT BLOCK, FLASH MEMORY FAMILY 2, 4, 8 MBIT |
Intel |
| 73 |
28F200B5 |
SMART 5 BOOT BLOCK, FLASH MEMORY FAMILY 2, 4, 8 MBIT |
Intel |
| 74 |
28F400B5 |
SMART 5 BOOT BLOCK, FLASH MEMORY FAMILY 2, 4, 8 MBIT |
Intel |
| 75 |
28F400B5 |
SMART 5 BOOT BLOCK, FLASH MEMORY FAMILY 2, 4, 8 MBIT |
Intel |
| 76 |
28F800B5 |
SMART 5 BOOT BLOCK, FLASH MEMORY FAMILY 2, 4, 8 MBIT |
Intel |
| 77 |
28F800B5 |
SMART 5 BOOT BLOCK, FLASH MEMORY FAMILY 2, 4, 8 MBIT |
Intel |
| 78 |
29C040 |
4-Megabit 512K x 8 5-volt Only 256-Byte Sector CMOS Flash Memory |
Atmel |
| 79 |
2N5492 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary 2N6109 |
SESCOSEM |
| 80 |
2N5494 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary 2N6111 |
SESCOSEM |
| 81 |
2N5496 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary 2N6107 |
SESCOSEM |
| 82 |
2N6107 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5496 |
SESCOSEM |
| 83 |
2N6109 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5492 |
SESCOSEM |
| 84 |
2N6111 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5494 |
SESCOSEM |
| 85 |
2N6288 |
40.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 7.000A Ic, 30 - 150 hFE. Complementary 2N6111 |
Continental Device India Limited |
| 86 |
2N6290 |
40.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 7.000A Ic, 2 hFE. Complementary 2N6109 |
Continental Device India Limited |
| 87 |
2SA1225 |
Silicon PNP epitaxial power transistor, complementary 2SC2983 |
TOSHIBA |
| 88 |
2SA1284 |
900mW Lead frame PNP transistor, maximum rating: -100V Vceo, -500mA Ic, 55 to 300 hFE. Complementary 2SC3244 |
Isahaya Electronics Corporation |
| 89 |
2SA1302 |
Silicon PNP triple diffused power transistor, complementary 2SC3281 |
TOSHIBA |
| 90 |
2SA1363 |
500mW SMD PNP transistor, maximum rating: -16V Vceo, -2A Ic, 150 to 800 hFE. Complementary 2SC3443 |
Isahaya Electronics Corporation |
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