| No. |
Part Name |
Description |
Manufacturer |
| 61 |
2SA1204 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications |
TOSHIBA |
| 62 |
2SA1226 |
HIGH FREQUENCY AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 63 |
2SA1245 |
Transistor Silicon PNP Epitaxial Planar Type High Frequency Amplifier and Switching Applications VHF~UHF Band Low Noise Amplifier Applications |
TOSHIBA |
| 64 |
2SA1254 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 65 |
2SA12H |
Germanium PNP Alloyed Junction Transistor, intended for use in 455kHz intermediate frequency amplifier |
Hitachi Semiconductor |
| 66 |
2SA1323 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 67 |
2SA1461 |
HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 68 |
2SA1464 |
HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD |
NEC |
| 69 |
2SA1483 |
Transistor Silicon PNP Epitaxial Type (PCT process) High Frequency Amplifier Applications Video Amplifier Applications High Speed SwitcHing Applications |
TOSHIBA |
| 70 |
2SA1532 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 71 |
2SA1575 |
PNP Epitaxial Planar Silicon Transistors High-Frequency Amplifier, Wide-Band Amplifier Applications |
SANYO |
| 72 |
2SA1608 |
HIGH FREQUENCY AMPLIFIER AND SWITCHING PNP SILICON EPITAXIAL TRANSISTOR |
NEC |
| 73 |
2SA1620 |
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications |
TOSHIBA |
| 74 |
2SA1669 |
PNP Epitaxial Planar Silicon Transistor High-Frequency Amplifier Applications |
SANYO |
| 75 |
2SA1703 |
PNP Epitaxial Planar Silicon Transistor Low-Frequency Amplifier, Electronic Governor Applications |
SANYO |
| 76 |
2SA1723 |
PNP Epitaxial Planar Silicon Transistors High-Frequency Amplifier, Medium-Power Amplifier Applications |
SANYO |
| 77 |
2SA1790 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 78 |
2SA1790J |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 79 |
2SA1811 |
TRANSISTOR SILICON PNP EPITAXIAL TYPE LOW FREQUENCY AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS |
TOSHIBA |
| 80 |
2SA2164 |
Small-signal device - Small-signal transistor - High-Frequency Amplifiers and Others |
Panasonic |
| 81 |
2SA234 |
Germanium Transistor PNP MESA, intended for use in FM Intermediate Frequency Amplifier, SW Frequency Converter |
Hitachi Semiconductor |
| 82 |
2SA353 |
Germanium PNP Transistor Drift Junction, intended for use in 455kHz Intermediate Frequency Amplifier |
Hitachi Semiconductor |
| 83 |
2SA495G |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
| 84 |
2SA499 |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
| 85 |
2SA500 |
Silicon PNP epitaxial planar transistor, high frequency amplifier and high speed switching applications |
TOSHIBA |
| 86 |
2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW. |
USHA India LTD |
| 87 |
2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW. |
USHA India LTD |
| 88 |
2SA673AB |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
| 89 |
2SA673AC |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
| 90 |
2SA673AD |
PNP transistor for Low frequency amplifier, 50V, 500mA |
Hitachi Semiconductor |
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