| No. |
Part Name |
Description |
Manufacturer |
| 61 |
ADC-318A |
8-Bit, 120MHz and 140MHz Full-Flash A/D Converter |
Datel |
| 62 |
ADSP-BF606 |
Blackfin Dual-Core Processor up to 800 MHz for High Performance Digital Signal Processing Applications |
Analog Devices |
| 63 |
ADSP-BF607 |
Blackfin Dual-Core Processor up to 1GHz for High Performance Digital Signal Processing Applications |
Analog Devices |
| 64 |
AMMC-6120 |
AMMC-6120 · 8-24 GHz Frequency Multiplier (Doubler) |
Agilent (Hewlett-Packard) |
| 65 |
AMMC-6140 |
AMMC-6140 · 10-40 GHz Frequency Multiplier (Doubler) |
Agilent (Hewlett-Packard) |
| 66 |
AS3901 |
ISM 433/315 MHz FSK/ASK Transmitter |
Austria Mikro Systems |
| 67 |
ASCELL3911 |
ISM 868 MHz, 433 MHz and 315 MHz FSK Transmitter |
Austria Mikro Systems |
| 68 |
ASCELL3912 |
ISM 868 MHz, 433 MHz and 315 MHz FSK Receiver Cell |
Austria Mikro Systems |
| 69 |
BAT62 |
Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies.) |
Siemens |
| 70 |
BAT62-02W |
Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) |
Siemens |
| 71 |
BAT62-03W |
Silicon Schottky Diode (Low Barrier diode for detectors up to GHz frequencies) |
Siemens |
| 72 |
BAT62-07 |
Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) |
Siemens |
| 73 |
BAT62-07W |
Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) |
Siemens |
| 74 |
BAT63 |
Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies) |
Siemens |
| 75 |
BAT63-099R |
Silicon Schottky Diodes (Zero bias diode array for mixer and detectors up to GHz frequencies Crossover ring quad) |
Siemens |
| 76 |
BF550 |
PNP Silicon RF Transistor (For common emitter amplifier stages up to 300 MHz For mixer applications in AM/FM radios and VHF TV tuners) |
Siemens |
| 77 |
BFG193 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
| 78 |
BFP193 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
| 79 |
BFP193W |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
| 80 |
BFQ193 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
| 81 |
BFR193 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
| 82 |
BFR193W |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers) |
Siemens |
| 83 |
BGY22 |
UHF Power Amplifier Module 380 to 512 MHz freq. range |
Philips |
| 84 |
BGY22A |
UHF Power Amplifier Module 420 to 480 MHz frequency range |
Philips |
| 85 |
BLD6G21L-50 |
TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor |
NXP Semiconductors |
| 86 |
BLD6G21LS-50 |
TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor |
NXP Semiconductors |
| 87 |
BLD6G22L-50 |
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor |
NXP Semiconductors |
| 88 |
BLD6G22LS-50 |
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor |
NXP Semiconductors |
| 89 |
CFY77 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
| 90 |
CFY77-08 |
AlGaAs / InGaAs HEMT (Very low noise Very high gain For low noise front end amplifiers up to 20 GHz For DBS down converters) |
Siemens |
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